Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Kuo-Hsing Kao"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-9 (2023)
Abstract Although Technology Computer-Aided Design (TCAD) simulation has paved a successful and efficient way to significantly reduce the cost of experiments under the device design, it still encounters many challenges as the semiconductor industry g
Externí odkaz:
https://doaj.org/article/8ca17548260c4df8b627f5565d5aa406
Autor:
Kuo-Hsing Kao, 高國興
96
In this thesis we form the high-κ dielectric CoTiO3 by sol-gel spin coating method followed by different annealing temperature 600~900oC. The image of transmission electron microscopy (TEM) reveals that 2.2 nm interfacial layer is between Si
In this thesis we form the high-κ dielectric CoTiO3 by sol-gel spin coating method followed by different annealing temperature 600~900oC. The image of transmission electron microscopy (TEM) reveals that 2.2 nm interfacial layer is between Si
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/tft2v3
Autor:
William Cheng-Yu Ma, Chun-Jung Su, Kuo-Hsing Kao, Yao-Jen Lee, Ju-Heng Lin, Pin-Hua Wu, Jui-Che Chang, Cheng-Lun Yen, Hsin-Chun Tseng, Hsu-Tang Liao, Yu-Wen Chou, Min-Yu Chiu, Yan-Qing Chen
Publikováno v:
IEEE Transactions on Electron Devices. 69:6072-6077
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa16de1a1a97238c30302c1ff2f45cfc
https://doi.org/10.1109/ted.2022.3208847
https://doi.org/10.1109/ted.2022.3208847
Autor:
Shu-Wei Chang, Tsung-Han Lu, Cong-Yi Yang, Cheng-Jui Yeh, Min-Kun Huang, Ching-Fan Meng, Po-Jen Chen, Ting-Hsuan Chang, Yan-Shiuan Chang, Jhe-Wei Jhu, Tzu-Chieh Hong, Chu-Chu Ke, Xin-Ren Yu, Wen-Hsiang Lu, Mohammed Aftab Baig, Ta-Chun Cho, Po-Jung Sung, Chun-Jung Su, Fu-Kuo Hsueh, Bo-Yuan Chen, Hsin-Hui Hu, Chien-Ting Wu, Kun-Lin Lin, William Cheng-Yu Ma, Darsen D. Lu, Kuo-Hsing Kao, Yao-Jen Lee, Cheng-Li Lin, Kun-Ping Huang, Kun-Ming Chen, Yiming Li, Seiji Samukawa, Tien-Sheng Chao, Guo-Wei Huang, Wen-Fa Wu, Wen-Hsi Lee, Jiun-Yun Li, Jia-Min Shieh, Jenn-Hwan Tarng, Yeong-Her Wang, Wen-Kuan Yeh
Publikováno v:
IEEE Transactions on Electron Devices. 69:2101-2107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa9cb013d52736a9ce09e236a25eabeb
https://doi.org/10.1109/ted.2021.3138947
https://doi.org/10.1109/ted.2021.3138947
This paper compares the electrical characteristics of MOSFETs and tunnel FETs at different temperatures (300 ~ 10 K) by advance Sentaurus TCAD simulations at low temperature. we deliberated output characteristics of short-channel MOSFETs based on tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92c057baf7235de21f3dba97ab5c6be9
https://doi.org/10.21203/rs.3.rs-1765177/v1
https://doi.org/10.21203/rs.3.rs-1765177/v1
Autor:
William Cheng-Yu Ma, Chun-Jung Su, Kuo-Hsing Kao, Ta-Chun Cho, Jing-Qiang Guo, Cheng-Jun Wu, Po-Ying Wu, Jia-Yuan Hung
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:055006
In this work, a ferroelectric tunnel thin-film transistor (FeT-TFT) with polycrystalline-silicon (poly-Si) channel and ferroelectric HfZrOx gate dielectric is demonstrated with analog memory characteristics for the application of synaptic devices. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b409c5d5acd16480e7e25c6750f5805
https://doi.org/10.1149/2162-8777/acd212
https://doi.org/10.1149/2162-8777/acd212
Publikováno v:
IEEE Transactions on Electron Devices. 68:294-298
This work investigates the correlation between dipole formation and surface energy at a nonplanar dielectric interface on a Si nanowire (NW) by means of molecular dynamics simulations. According to the atom and charge distribution obtained by simulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42d7b3d1a7b33c9829f567df43cff2bc
https://doi.org/10.1109/ted.2020.3039228
https://doi.org/10.1109/ted.2020.3039228
Autor:
Kuo-Hsing Kao, Nan-Yow Chen, Chun-Jung Su, William Cheng-Yu Ma, Yao-Jen Lee, Tzung Rang Wu, Wen-Jay Lee, Hong-Lin Chen
Publikováno v:
IEEE Electron Device Letters. 41:1296-1299
According to quantum transport simulations, source-to-drain tunneling (SDT) has been recognized as the main cause leading to subthreshold swing ( SS ) saturation and degradation of short-channel MOSFETs at cryogenic temperatures. Generally, at a give
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4d2cd1ed500351e131b3a5829b9eb8d
https://doi.org/10.1109/led.2020.3012033
https://doi.org/10.1109/led.2020.3012033
Autor:
William Cheng-Yu Ma, Chun-Jung Su, Kuo-Hsing Kao, Yao-Jen Lee, Pin-Hua Wu, Hsin-Chun Tseng, Hsu-Tang Liao, Yu-Wen Chou, Min-Yu Chiu, Yan-Qing Chen
Publikováno v:
Semiconductor Science and Technology. 38:035020
In this work, the ferroelectric thin-film transistor (Fe-TFT) with polycrystalline-silicon (poly-Si) channel and HfZrO x gate dielectric is fabricated to study the characteristics of non-volatile memory (NVM). Significant threshold voltage (V TH) mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1065bfc98d5c1c776b26425d0b6ec76
https://doi.org/10.1088/1361-6641/acb8d2
https://doi.org/10.1088/1361-6641/acb8d2
Autor:
Wen-Jay Lee, Tzung Rang Wu, Jyun-Hwei Tsai, Jia-Ming Liou, Shang-Wei Lian, Si-Hua Chen, Tay-Rong Chang, Nan-Yow Chen, Kuo-Hsing Kao, Darsen D. Lu
Publikováno v:
IEEE Transactions on Electron Devices. 66:2509-2512
The dielectric screening property of a semiconductor is very crucial for the electrical characteristics of a MOSFET, and which can be described mathematically by Poisson equation via the permittivity. While the theory and experiments have corroborate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d375744bb1db2da063b0e91fa235effc
https://doi.org/10.1109/ted.2019.2912058
https://doi.org/10.1109/ted.2019.2912058