Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Kuo-Dong Huang"'
Autor:
Kuo-Dong Huang, 黃國棟
96
This thesis is mainly proposed and discussed the characteristics of polycrystalline silicon thin film transistor putting forward and probing into four kinds of novel buried-oxide structures. Because of the shortcoming of the traditional polyc
This thesis is mainly proposed and discussed the characteristics of polycrystalline silicon thin film transistor putting forward and probing into four kinds of novel buried-oxide structures. Because of the shortcoming of the traditional polyc
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/rm33e7
Autor:
Kuo-Dong Huang, 黃國棟
92
Ultrathin oxide gated (thickness ~6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly coupled (~0.6) polysilicon transistors. Current-voltage measurements show periodic scillations up to
Ultrathin oxide gated (thickness ~6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly coupled (~0.6) polysilicon transistors. Current-voltage measurements show periodic scillations up to
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/51416156131831004177
Autor:
Kuo-Dong Huang, 黃國棟
89
The investors made decisions for investment on sophisticated investment environ-ment. Undoubtedly, the investors hope earn more returns to increase their wealth. In recent years, many researchers try to use data mining or other relates techni
The investors made decisions for investment on sophisticated investment environ-ment. Undoubtedly, the investors hope earn more returns to increase their wealth. In recent years, many researchers try to use data mining or other relates techni
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/73105296816065888317
Publikováno v:
Pramana: Journal of Physics. Jul2006, Vol. 67 Issue 1, p57-65. 9p.
Publikováno v:
IEEE Electron Device Letters. 29:1222-1225
Polycrystalline silicon thin-film transistors (TFTs) can be improved by integrating DRAM on chip. However, the TFT's poor capacitance means that traditional DRAMs are infeasible, because they require a capacitor. An alternative, the one-transistor DR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35feedd5f5fb772581d74df65cf4a88d
https://doi.org/10.1109/led.2008.2004632
https://doi.org/10.1109/led.2008.2004632
Autor:
Jyi-Tsong Lin, Kuo-Dong Huang
Publikováno v:
IEEE Transactions on Electron Devices. 55:2417-2422
In this paper, a high-performance polysilicon thin-film transistor (poly-Si TFT) with a trenched body is proposed, fabricated, and studied. This new trenched TFT can be easily produced by filling and etch-back technology without destroying the channe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2da9a4ede8aff4bc89dfa0d9459282aa
https://doi.org/10.1109/ted.2008.927667
https://doi.org/10.1109/ted.2008.927667
Publikováno v:
Solid-State Electronics. 52:808-812
This paper investigates the effects of a smart body tie on the bottom-gate polycrystalline silicon thin film transistor (TFT). The smart body tie TFT has been fabricated and exhibits the superior electrical characteristics, though it involves only a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e64aadd61dbbb39e990b394035f622cd
https://doi.org/10.1016/j.sse.2007.11.009
https://doi.org/10.1016/j.sse.2007.11.009
Autor:
Yue-Min Wan1 ymwan@isu.edu.tw, Kuo-Dong Huang2,3 kdhuang@nsysu.edu.tw, Shu-Fen Hu4,5 sfhu@ndl.gov.tw, Chin Lung Sun4 clsun@ndl.gov.tw
Publikováno v:
World Congress on Engineering 2009 (Volume 1). 2009, p397-399. 3p. 2 Diagrams, 3 Graphs.
Publikováno v:
Solid-State Electronics. 51:1056-1061
This study investigates structural modifications of the conventional TFT, which is suffers from the short-channel effect in advanced applications. An ideal body-block poly-Si thin-film transistor is successfully fabricated for the first time at a lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e93e36ce21c918ce4d1b3e98e8acfee3
https://doi.org/10.1016/j.sse.2007.02.043
https://doi.org/10.1016/j.sse.2007.02.043
Publikováno v:
ECS Transactions. 2:1-7
A novel structure of bottom gate polysilicon thin-film transistor (TFT) with smart body tie is firstly investigated. Comparing with a conventional bottom gate TFT, the simulation results derived from the well-known ISE-TCAD simulator have shown that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::249c28ae3eaf9828671da17067c969c6
https://doi.org/10.1149/1.2409018
https://doi.org/10.1149/1.2409018