Zobrazeno 1 - 10
of 2 774
pro vyhledávání: '"Kunze, U"'
Autor:
Hastall MR; Faculty of Rehabilitation Sciences, Technical University of Dortmund, Dortmund, Germany., Koinig I; Department of Media and Communication Studies, University of Klagenfurt, Klagenfurt, Austria., Kunze U; Center for Public Health, Medical University of Vienna, Vienna, Austria. ursula.kunze@meduniwien.ac.at., Meixner O; Institute of Marketing and Innovation, University of Natural Resources and Life Sciences, Vienna, Austria., Sachse K; Business psychology, FOM University of Applied Sciences, Berlin, Germany., Würzner R; Institute for Hygiene and Medical Microbiology, Medical University of Innsbruck, Innsbruck, Austria.
Publikováno v:
Wiener medizinische Wochenschrift (1946) [Wien Med Wochenschr] 2024 May; Vol. 174 (7-8), pp. 149-152. Date of Electronic Publication: 2022 Jul 06.
Publikováno v:
Appl. Phys. Lett. 95, 262101 (2009)
We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a
Externí odkaz:
http://arxiv.org/abs/0910.4010
Injection-type ballistic rectifiers on Si/SiGe are studied with respect to the influence of gate voltage on the transfer resistance RT (output voltage divided by input current) for different positions of a local gate electrode. The rectifiers are tri
Externí odkaz:
http://arxiv.org/abs/0904.3226
Publikováno v:
Appl. Phys. Lett. 94, 022107 (2009)
We investigate ballistic transport and quantum interference in a nanoscale quantum wire loop fab-ricated as a GaAs/AlGaAs field-effect heterostructure. Four-terminal measurements of current and voltage characteristics as a function of top gate voltag
Externí odkaz:
http://arxiv.org/abs/0811.3150
Publikováno v:
J. Appl. Phys. 96 (11), 6706-6711 (2004).
Ferromagnetic electrodes of a lateral semiconductor-based spin-valve structure are designed to provide a maximum of spin-polarized injection current. A single-domain state in remanence is a prerequisite obtained by nanostructuring Permalloy thin film
Externí odkaz:
http://arxiv.org/abs/cond-mat/0312466
Autor:
Dolgopolov, V. T., Deviatov, E. V., Shashkin, A. A., Wieser, U., Kunze, U., Abstreiter, G., Brunner, K.
Publikováno v:
Superlattices Microstruct. 33, 271 (2003)
The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements
Externí odkaz:
http://arxiv.org/abs/cond-mat/0310107
Publikováno v:
In Fuel and Energy Abstracts 2004 45(4):259-259
Publikováno v:
Journal of Applied Physics; 2019, Vol. 125 Issue 16, pN.PAG-N.PAG, 7p, 1 Color Photograph, 2 Diagrams, 3 Graphs
Publikováno v:
In Microelectronic Engineering August 2011 88(8):2386-2389
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2010 42(10):2618-2621