Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Kuntal Joardar"'
Publikováno v:
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS).
A new approach using a combination of analytical models, Spice simulations, and test structures is reported that allows for a comprehensive treatment of 3-dimensional (3D) distributed effects in vertical power FETs. This method leads to higher accura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08709ec9fa36136731930bd3e740e390
https://doi.org/10.1109/icmts.2019.8730949
https://doi.org/10.1109/icmts.2019.8730949
Publikováno v:
Proceedings of the 2015 International Conference on Microelectronic Test Structures.
This paper presents a physics-based compact model for four-terminal (4T) JFETs. It is capable of modeling device characteristics when the top and bottom gates are biased independently. The model is formulated using symmetric linearization technique f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fc450e1f80459c5393879deadb48860
https://doi.org/10.1109/icmts.2015.7106105
https://doi.org/10.1109/icmts.2015.7106105
Publikováno v:
ESSDERC
We report a device physics theory and compact model that predicts the threshold voltage mismatch for CMOS transistors using the halo implant. This model is able to fit CMOS VT mismatch across temperature and device geometry, validating the underlying
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aca71a58accea6e11f66c7a61d14aae
https://doi.org/10.1109/essderc.2014.6948848
https://doi.org/10.1109/essderc.2014.6948848
Publikováno v:
IEEE Transactions on Electron Devices. 45:134-148
Problems that have continued to remain in some of the recently published MOSFET compact models are demonstrated in this paper. Of particular interest are discontinuities observed in these models at the boundary between forward and reverse mode operat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c51d9b1f9a9751b28a9a95768d0967c
https://doi.org/10.1109/16.658823
https://doi.org/10.1109/16.658823
Autor:
Kuntal Joardar
Publikováno v:
Solid-State Electronics. 39:1193-1198
A new methodology for measuring p n junction capacitance is demonstrated. The method is d.c. based making it suitable for use in automated high volume measurements. The validity of the technique is supported by both simulated and experimentally measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83cfb9bdff405d044ebaf1c8a2a76137
https://doi.org/10.1016/0038-1101(96)00026-3
https://doi.org/10.1016/0038-1101(96)00026-3
Autor:
Kuntal Joardar
Publikováno v:
Solid-State Electronics. 39:511-516
A comparison of several crosstalk reduction schemes using two-dimensional device simulation and measurements on silicon has shown that while SOI based processes provide high isolation from crosstalk, fully junction isolated wells can provide equal or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89e48577593f75c2802bf3e2fb259f18
https://doi.org/10.1016/0038-1101(95)00189-1
https://doi.org/10.1016/0038-1101(95)00189-1
Autor:
Kuntal Joardar
Publikováno v:
IEEE Transactions on Electron Devices. 42:2189-2196
A new DC measurement technique that allows direct observation of the forward and reverse Early effects is described. The technique employs a special test structure and is used to accurately determine the Early voltage parameters in the Gummel-Poon mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e74f443fb1ae715f0b9834e3a89268e7
https://doi.org/10.1109/16.477778
https://doi.org/10.1109/16.477778
Autor:
Kuntal Joardar
Publikováno v:
Solid-State Electronics. 37:1793-1797
A new test structure and measurement technique is described that allows improved monitoring of the integrated channel doping in MOSFETs which is the primary cause of statistical threshold voltage fluctuations. The methodology is physically based and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::159e17b8fce838165eeb8cfe31fab43f
https://doi.org/10.1016/0038-1101(94)90169-4
https://doi.org/10.1016/0038-1101(94)90169-4
Autor:
Kuntal Joardar
Publikováno v:
IEEE Transactions on Electron Devices. 41:373-382
Detailed analyses of the lateral bipolar transistor have been performed and a physically based model for the collector current developed. Hybrid mode operation of the lateral BJT in the presence of a gate electrode has been considered. Two-dimensiona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f295c3cb87b215850b341dfd84ada58a
https://doi.org/10.1109/16.275223
https://doi.org/10.1109/16.275223
Publikováno v:
Journal of Applied Physics. 73:3835-3840
The linearized energy and momentum balance equations of the single electron gas transport model are considered. A general analytic solution is obtained for transient velocity responses to arbitrary time dependent field perturbations. A criterion for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4e012c13f9a6f9cec85a26ff2a4b9ce
https://doi.org/10.1063/1.352892
https://doi.org/10.1063/1.352892