Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Kuntae Kim"'
Autor:
Sungtae Kim, Min-Woo Jeong, Kuntae Kim, Ung-gi Kim, Miyoung Kim, So-Yeon Lee, Young-Chang Joo
Publikováno v:
RSC Advances. 13:2131-2139
The importance of nitrogen in developing amorphous carbon hardmask with excellent performance, and physical and chemical properties to utilize in long-term etching is spotlighted due to the acceleration of development in high-density semiconductors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e9f02f4531f1432839e6d6505f4e65c
https://doi.org/10.1039/d2ra06808g
https://doi.org/10.1039/d2ra06808g
Publikováno v:
Journal of KIISE. 47:1126-1133
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d542ed186c24a963961c48973d6b4ddb
https://doi.org/10.5626/jok.2020.47.12.1126
https://doi.org/10.5626/jok.2020.47.12.1126
Autor:
Seung Hyun Cho, Kuntae Kim, Sung-Tae Hong, Juwon Park, Taehoon Heo, Janghyun Jo, Moon-Jo Kim, Heung Nam Han, Sangmoon Yoon, Hye Jin Jeong, Young-Kyun Kwon, In-Suk Choi, Miyoung Kim, Siwook Park
Publikováno v:
Applied Materials Today. 21:100874
Electroplastic phenomenon has been demonstrated by that the elongation increases remarkably during deformation under electric current without a significant elevation of temperature due to Joule heating. Since the 1960s, the electroplasticity has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc5a79c41808eccc0e50a62cd85da024
https://doi.org/10.1016/j.apmt.2020.100874
https://doi.org/10.1016/j.apmt.2020.100874
Publikováno v:
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-1 (2018)
Scientific Reports, Vol 8, Iss 1, Pp 1-1 (2018)
High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. For conventional amorphous IGZO TFTs, the active layer cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d6191c419ce552e941c97cdaae218978
http://europepmc.org/articles/PMC5951812
http://europepmc.org/articles/PMC5951812
Publikováno v:
SCIENTIFIC REPORTS(7)
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Scientific Reports
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Scientific Reports
High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. For conventional amorphous IGZO TFTs, the active layer cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ae26692106e46047f770a0a662e7fc5
http://open-repository.kisti.re.kr/cube/handle/open_repository/486006.do
http://open-repository.kisti.re.kr/cube/handle/open_repository/486006.do
Publikováno v:
International Journal of Software Engineering and Knowledge Engineering. :333-346
Effective fault-management in emerging complex distributed applications requires the ability to dynamically adapt resource allocation and fault tolerance policies in response to possible changes in environment, application requirements, and available
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4c62fbfe64440800c4226fcb9af7972
https://doi.org/10.1142/s0218194098000182
https://doi.org/10.1142/s0218194098000182
Publikováno v:
International Journal of Software Engineering and Knowledge Engineering. :351-369
In current multi-agent systems, the user is typically interacting with a single agent at a time through relatively inflexible and modestly intelligent interfaces. As a consequence, these systems force the users to submit simplistic requests only and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05fa573632d524ea860bca920d9a0600
https://doi.org/10.1142/s0218194097000217
https://doi.org/10.1142/s0218194097000217