Zobrazeno 1 - 10
of 604
pro vyhledávání: '"Kunji, Chen"'
Autor:
Zongyan Zuo, Chengfeng Zhou, Zhongyuan Ma, Yufeng Huang, Liangliang Chen, Wei Li, Jun Xu, Kunji Chen
Publikováno v:
Nanomaterials, Vol 14, Iss 18, p 1474 (2024)
A neuromorphic computing network based on SiCx memristor paves the way for a next-generation brain-like chip in the AI era. Up to date, the SiCx–based memristor devices are faced with the challenge of obtaining flexibility and uniformity, which can
Externí odkaz:
https://doaj.org/article/0dbc229f4eb440c3aa7621b4f39296ad
Publikováno v:
Nanomaterials, Vol 14, Iss 17, p 1412 (2024)
As the key hardware of a brain-like chip based on a spiking neuron network (SNN), memristor has attracted more attention due to its similarity with biological neurons and synapses to deal with the audio signal. However, designing stable artificial ne
Externí odkaz:
https://doaj.org/article/0133dc34fccd4a2386fb1a2eba995862
Publikováno v:
Nanomaterials, Vol 14, Iss 15, p 1306 (2024)
As the driving source, highly efficient silicon-based light emission is urgently needed for the realization of optoelectronic integrated chips. Here, we report that enhanced green electroluminescence (EL) can be obtained from oxygen-doped silicon nit
Externí odkaz:
https://doaj.org/article/3b11ba31996346b2960ffedfcf6e0efa
Autor:
Rongrong Yuan, Wentao Qian, Ying Zhang, Zongguang Liu, Junzhuan Wang, Jun Xu, Kunji Chen, Linwei Yu
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 7, Pp n/a-n/a (2023)
Abstract Flexible and transparent conductive (FTC) thin films are indispensable elements in building high‐performance flexible or soft electronics and displays. Slim inorganic nanowires (NWs), with excellent conductivity and durability, are ideal o
Externí odkaz:
https://doaj.org/article/05350a7e5d134510a2b52cf7df0d1443
Autor:
Xiaopan Song, Lei Wu, Yifei Liang, Zongguang Liu, Junzhuan Wang, Jun Xu, Kunji Chen, Linwei Yu
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 4, Pp n/a-n/a (2023)
Abstract Catalytic synthesized ultrathin silicon nanowires (SiNWs) are ideal 1D channel materials to fabricate high‐performance transparent and low‐cost thin film transistors (TFTs) that are widely needed for flexible electronics and displays. In
Externí odkaz:
https://doaj.org/article/31d112475d49422685a8ec2f54acf546
Publikováno v:
AIP Advances, Vol 12, Iss 10, Pp 105212-105212-6 (2022)
As the key hardware unit of computing in memory, 3D NAND flash memory has been the focus of the artificial intelligence (AI) era due to its high efficiency in processing massive and diverse data, which is superior to the conventional von-Neumann arch
Externí odkaz:
https://doaj.org/article/0b2ce8234bb24142993ca2ab177244bb
Publikováno v:
Nanomaterials, Vol 13, Iss 18, p 2594 (2023)
The 29th International Conference on Amorphous and Nanocrystalline Semiconductors served as a continuation of the biennial conference that has been held since 1965 [...]
Externí odkaz:
https://doaj.org/article/97df3930e74c4f8f8f3828e5f800af00
Autor:
Tong Chen, Zhongyuan Ma, Hongsheng Hu, Yang Yang, Chengfeng Zhou, Furao Shen, Haitao Xu, Jun Xu, Ling Xu, Wei Li, Kunji Chen
Publikováno v:
Nanomaterials, Vol 13, Iss 16, p 2362 (2023)
Inspired by its highly efficient capability to deal with big data, the brain-like computational system has attracted a great amount of attention for its ability to outperform the von Neumann computation paradigm. As the core of the neuromorphic compu
Externí odkaz:
https://doaj.org/article/c57d8f37aac947d49f2102e0e7503d5b
Autor:
Xiaopan Song, Ting Zhang, Lei Wu, Ruijin Hu, Wentao Qian, Zongguang Liu, Junzhuan Wang, Yi Shi, Jun Xu, Kunji Chen, Linwei Yu
Publikováno v:
Advanced Science, Vol 9, Iss 9, Pp n/a-n/a (2022)
Abstract Quasi‐1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large‐area elastomers are advantageous candidates for developing various high‐performance stretchable electronics and displays. In this work, it is demo
Externí odkaz:
https://doaj.org/article/68ede58c7be947e982c62ed5aa57c955
Autor:
Hengping Dong, Kunji Chen, Huafeng Yang, Zhongyuan Ma, Jun Xu, Wei Li, Linwei Yu, Xinfan Huang
Publikováno v:
APL Photonics, Vol 7, Iss 2, Pp 026102-026102-9 (2022)
The photoresponsivity and response speed are two key figures of merit for the photodetector (PD). According to the previous reports, there is an inherent contradiction between high photoresponsivity and fast response speed in normal photoconductive-t
Externí odkaz:
https://doaj.org/article/86e5d518e2bd40dcbddec906e5435267