Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Kunjesh Agashiwala"'
Autor:
Arnab Pal, Kunjesh Agashiwala, Junkai Jiang, Dujiao Zhang, Tanmay Chavan, Ankit Kumar, Chao-Hui Yeh, Wei Cao, Kaustav Banerjee
Publikováno v:
MRS Bulletin. 46:1211-1228
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9dc13233691cdc5b77473d86eb7407a
https://doi.org/10.1557/s43577-022-00270-0
https://doi.org/10.1557/s43577-022-00270-0
Publikováno v:
IEEE Transactions on Electron Devices, vol 68, iss 4
Doped-multilayer-graphene (DMLG) interconnects employing the subtractive-etching (SE) process have opened a new pathway for designing interconnects at advanced technology nodes, where conventional metal wires suffer from significant resistance increa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0df5fc0b671223d5c61edad6d7aa57df
https://doi.org/10.1109/ted.2021.3061637
https://doi.org/10.1109/ted.2021.3061637
Correction to: Two-dimensional materials enabled next-generation low-energy compute and connectivity
Autor:
Arnab Pal, Kunjesh Agashiwala, Junkai Jiang, Dujiao Zhang, Tanmay Chavan, Ankit Kumar, Chao-Hui Yeh, Wei Cao, Kaustav Banerjee
Publikováno v:
MRS Bulletin.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d791c9f0a84ddb3095f4ae49a320feaf
https://doi.org/10.1557/s43577-022-00309-2
https://doi.org/10.1557/s43577-022-00309-2
Autor:
Arnab Pal, Shuo Zhang, Tanmay Chavan, Kunjesh Agashiwala, Chao‐Hui Yeh, Wei Cao, Kaustav Banerjee
Publikováno v:
Advanced Materials. :2109894
As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid-state electronics, one of the most successful technologies in the history of human civilization.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7543581bf927540db63ff7b91acf41d4
https://doi.org/10.1002/adma.202109894
https://doi.org/10.1002/adma.202109894
Autor:
Kamyar Parto, Tanmay Chavan, Arnab Pal, Kaustav Banerjee, Kunjesh Agashiwala, Wei Cao, Chao-Hui Yeh
Publikováno v:
Physical Review Applied. 15
Low-resistance ohmic contacts are a prerequisite for implementing two-dimensional transition-metal dichalcogenides (2D TMDs) in a host of applications. Edge contacts offer unique advantages, yet their electrical properties are not fully understood. E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aa79919110e4b01f49c817e31024c22
https://doi.org/10.1103/physrevapplied.15.064068
https://doi.org/10.1103/physrevapplied.15.064068
Reliability and Performance of CMOS-Compatible Multi-Level Graphene Interconnects Incorporating Vias
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Doped-multilayer-graphene (DMLG) interconnects employing the subtractive-etching (SE) process have opened a new pathway for designing interconnects for extremely scaled dimensions [1],[2]. Even though single-level scaled graphene wires have been demo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4dbda165c0079487231b72adabaf8d7
https://doi.org/10.1109/iedm13553.2020.9371986
https://doi.org/10.1109/iedm13553.2020.9371986
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
This work presents the first comprehensive study of spin-injection into 2D materials by analyzing applications in both spintronics and Magnetic Tunnel Junctions (MTJs). Using ab-initio Density Functional Theory (DFT) simulations coupled with Non-Equi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bc68ed54b9047e755e88a8f979270fb
https://doi.org/10.1109/iedm19573.2019.8993578
https://doi.org/10.1109/iedm19573.2019.8993578
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
Kinetic Inductance has been recently exploited at room temperature to create materials with inductance densities that exceed the traditional Faraday limit [1], [2]. In this work, for the first time, we develop a rigorous theoretical framework to unco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbd9eccbd066fa0c50b600dd3e49d839
https://doi.org/10.1109/iedm.2018.8614525
https://doi.org/10.1109/iedm.2018.8614525