Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Kuniyoshi Okamoto"'
Publikováno v:
共立女子短期大学生活科学科紀要 = Annual bulletin department of the science of living. 56:53-59
The purpose of this research decided to make the trial calculation of the C02 emissions in production of bread. The C02 emissions of the energy reason of the bread manufacturing process in a factory and a home were surveyed. The heat source of domest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::b255bae08284f514879c4ecfb3fc328b
http://id.nii.ac.jp/1087/00002827/
http://id.nii.ac.jp/1087/00002827/
Autor:
Hiroaki Ohta, Kuniyoshi Okamoto
Publikováno v:
MRS Bulletin. 34:324-327
To achieve 520–532 nm green laser diodes (LDs), nonpolar and semipolar nitrides have attracted much attention because their usage leads to the elimination of the quantum-confined Stark effect and higher optical gains in this wavelength region. Sinc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99509e62dbacfabf0e32ad217418d46a
https://doi.org/10.1557/mrs2009.94
https://doi.org/10.1557/mrs2009.94
Publikováno v:
Japanese Journal of Applied Physics. 46:L1010-L1012
Polarized electroluminescence (EL) from m-plane InGaN-based blue light emitting diodes (LEDs) has been investigated. These LEDs comprised a ZnO transparent electrode as an anode, polished mirror-like sidewalls, and a polished backside with the reflec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::037e0af4a4248b438ec3aef4197c3088
https://doi.org/10.1143/jjap.46.l1010
https://doi.org/10.1143/jjap.46.l1010
Publikováno v:
Japanese Journal of Applied Physics. 46:L820-L822
Blue laser diodes (LDs) based on m-plane gallium nitride were demonstrated by using m-plane GaN substrates. The lasing wavelength and the threshold current under pulsed operation were 451.8 nm and 134 mA (22.3 kA/cm2), respectively. The device struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7d2cc8d79bce5b3819cc305f559019a
https://doi.org/10.1143/jjap.46.l820
https://doi.org/10.1143/jjap.46.l820
Autor:
Hidemi Takasu, Masayuki Sonobe, Kuniyoshi Okamoto, Jun Ichihara, Hiroaki Ohta, Daisuke Nakagawa
Publikováno v:
Japanese Journal of Applied Physics. 45:L1197-L1199
m-Plane (10-10) nonpolar InGaN-based light emitting diodes (LEDs) with no threading dislocations or stacking faults have been realized on m-plane GaN single crystals by conventional metal organic vapor phase epitaxy. The crystalline properties of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba7939eef21cfd96fbc69c34e8dc6cd5
https://doi.org/10.1143/jjap.45.l1197
https://doi.org/10.1143/jjap.45.l1197
Publikováno v:
Applied Physics Letters. 94:071105
We demonstrated nonpolar m-plane InGaN multiple quantum well laser diodes (LDs) under continuous-wave (cw) operation with a lasing wavelength of 499.8 nm, which is the longest reported for GaN-based LDs. A maximum optical output power of 15 mW was ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d444e132cf307a8e9dd9a273920a089
https://doi.org/10.1063/1.3078818
https://doi.org/10.1063/1.3078818
Autor:
Hiroaki Ohta, Kuniyoshi Okamoto, Takeyoshi Onuma, L. Zhao, Masashi Kubota, Hiromu Yamaguchi, Shigefusa F. Chichibu
Publikováno v:
Applied Physics Letters. 93:151908
Improved quantum efficiency and short radiative lifetime were demonstrated for the near-band-edge emission of nearly stacking-fault-free, 200–250-nm-thick, m-plane pseudomorphic InxGa1−xN (0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa8d8a7d15b7e849e9793a644da23479
https://doi.org/10.1063/1.2998580
https://doi.org/10.1063/1.2998580
Autor:
Masashi Kubota, Hiromu Yamaguchi, L. Zhao, Shigefusa F. Chichibu, Kuniyoshi Okamoto, Hiroaki Ohta
Publikováno v:
Applied Physics Letters. 93:129901
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c063b6c6488498943f809fa50c1f9985
https://doi.org/10.1063/1.2991440
https://doi.org/10.1063/1.2991440
Publikováno v:
Applied Physics Letters. 93(9):091112-091112-3
The threshold power density for the stimulated emission (SE) at 400 nm of m-plane In0.05Ga0.95N/GaN multiple quantum well (QW) laser diode (LD) wafer excited with a stripe along the c-axis was found to be lower than along the a-axis, although the SEs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e69655411d8ccd47a9cec7411a12d354
http://hdl.handle.net/10097/47564
http://hdl.handle.net/10097/47564
Publikováno v:
Applied Physics Express. 1:072201
We demonstrated nonpolar m-plane GaN-based blue-green laser diodes (LDs) under continuous-wave (cw) operation with a lasing wavelength of 481 nm. A maximum output power of more than 20 mW was achieved, for which the threshold current and the correspo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2628b89d4d12ee56c76650e512d7a5c
https://doi.org/10.1143/apex.1.072201
https://doi.org/10.1143/apex.1.072201