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pro vyhledávání: '"Kunitomo Morisawa"'
Autor:
Naoki Fukata, Kunitomo Morisawa, Masatoshi Tsujimura, Masahiro Kitajima, Noriyuki Uchida, Ryota Shirakawa, Kunie Ishioka, Kouichi Murakami, Haruhito Morihiro
Publikováno v:
Japanese Journal of Applied Physics. 48:091204
We found a new filtering effect of hydrogen (H) and deuterium (D) isotope atoms for penetration process into crystal silicon (Si) through the interface between a Si and SiO2 native oxide layer. More H atoms are introduced into Si than D for mixing ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7cf26fda9239c3470324f90fa37310a
https://doi.org/10.1143/jjap.48.091204
https://doi.org/10.1143/jjap.48.091204
