Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Kunio Masumo"'
Autor:
Kunio Masumo, Akira Mitsui
Publikováno v:
Thin Solid Films. 442:140-144
ITO films deposited on ZrO 2 undercoats by sputtering were investigated. The ITO films have a fine grain structure, compared to a grain–subgrain structure of conventional ITO films grown on a glass substrate. The grain structure of the ITO films gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46801adfd4d9e70f0cb443bda4f0f9cb
https://doi.org/10.1016/s0040-6090(03)00961-1
https://doi.org/10.1016/s0040-6090(03)00961-1
Autor:
Masaya Kunigita, Yoshiharu Ooi, Shinya Tahara, Minoru Sekine, Satoshi Niiyama, Naoki Kato, Hiroshi Kumai, Kunio Masumo
Publikováno v:
The Journal of the Institute of Image Information and Television Engineers. 53:1116-1121
A new compact projection display has been developed using light valves based on a 2-inch diagonal low-temperature poly-Si TFT reflective XGA array and polymer dispersed LC-mode, 120-W ultrahigh-pressure short-arc lamp (UHP lamp), and simple optical c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9273dc8ddeee8fff54c6e9774b3ae87
https://doi.org/10.3169/itej.53.1116
https://doi.org/10.3169/itej.53.1116
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
Double-texture (W-texture) TCO, which was named “HU-TCO”, has a combination of 300–500nm height and over 1μm width hills which are covered with submicron-size pyramidal texture that leads to high haze value in a wide wavelength range. We studi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44233de84f26b1c9d4d21adb70e07885
https://doi.org/10.1109/pvsc.2011.6186074
https://doi.org/10.1109/pvsc.2011.6186074
Autor:
Masanori Yuki, Kunio Masumo
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 76:112-116
In an attempt to fabricate poly-Si TFT with a field-effect mobility two orders of magnitude higher than a-Si TFT which can still be made at an equivalent cost as a-Si TFT, studies have been made of high-speed scanning Ar laser annealing. This paper p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff47dec91982b9ca5b077990b1c6ec3a
https://doi.org/10.1002/ecjb.4420760912
https://doi.org/10.1002/ecjb.4420760912
Autor:
Naoki Taneda, Mika Kambe, Kunio Masumo, Hitoshi Sai, Toru Ikeda, Takuya Matsui, Takuji Oyama, Akira Takahashi, Kazuo Sato, Michio Kondo
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
In this paper we report on the fabrication of amorphous silicon (a-Si:H) / microcrystalline silicon (μc- Si:H) p-i-n tandem solar cells on high haze fluorine-doped tin oxide (SnO 2 :F) transparent conductive oxide (TCO) thin films, type-HU. The HU-T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ece5d76bf60fc70ce50ab7ad755e8e4
https://doi.org/10.1109/pvsc.2009.5411411
https://doi.org/10.1109/pvsc.2009.5411411
Publikováno v:
2008 33rd IEEE Photovolatic Specialists Conference.
In this work we report on the properties of amorphous silicon (a-Si:H) p-i-n solar cells fabricated on glass substrates covered with extremely high haze fluorinedoped tin oxide (SnO 2 :F) transparent conductive oxide (TCO) thin films, HU-TCO. The HU-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::322b9e08924b39652b3781309a5a9754
https://doi.org/10.1109/pvsc.2008.4922507
https://doi.org/10.1109/pvsc.2008.4922507
Publikováno v:
MRS Proceedings. 1101
Newly developed SnO2:F films having “double–texture (W-texture)” were evaluated in terms of optical and electrical properties and compared with Asahi type-U substrate. “W-textured” transparent conductive oxide (TCO) film was composed of a c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18778afc232ef40dbcfa0d7b50ee0f87
https://doi.org/10.1557/proc-1101-kk02-01
https://doi.org/10.1557/proc-1101-kk02-01
Publikováno v:
Conference Record of the 1988 International Display Research Conference.
A process below 450 degrees C has been developed for poly-Si thin-film transistor (TFTs). The devices have higher mobility ( approximately 50 cm/sup 2//V-s) and higher reliability than a-Si TFTs. A 3.5-in. full-colour liquid-crystal display addressed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e4046a86cdcfc42433e7a314d09dbfb
https://doi.org/10.1109/displ.1988.11315
https://doi.org/10.1109/displ.1988.11315
Autor:
Atsushi Iwasaki, Kunio Masumo, Satoshi Takafuji, Nobuhiro Nakamura, Masaya Kunigita, Masanori Yuki
Publikováno v:
Extended Abstracts of the 1990 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d49cb839253eda334d51362f2b65deda
https://doi.org/10.7567/ssdm.1990.s-e-10
https://doi.org/10.7567/ssdm.1990.s-e-10
Publikováno v:
SID Symposium Digest of Technical Papers. 29:463
A 2 inches in diagonal low temperature poly-Si TFT reflective XGA array with driver integration was fabricated by Ar+ laser annealing method. An opaque organic film was used for a planarization layer of reflective electrodes as well as a light shield
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef0e8d6068be5b733f0f90a0bab75a96
https://doi.org/10.1889/1.1833792
https://doi.org/10.1889/1.1833792