Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Kunimichi Omae"'
Publikováno v:
The Review of Laser Engineering. 37:673-677
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08ef300021ef3a14acd9583e7f4f0213
https://doi.org/10.2184/lsj.37.673
https://doi.org/10.2184/lsj.37.673
Autor:
Masanori Morishita, Kunimichi Omae, Yusuke Mori, Fumio Kawamura, Masashi Yoshimura, Takatomo Sasaki
Publikováno v:
Journal of Materials Science: Materials in Electronics. 16:29-34
In the growth of GaN single crystal using the Na flux method, we succeeded in clarifying the role of Na in promoting nitrogen dissolution in the Ga-Na melt system above 900 K. At the gas-liquid interface of high temperature Ga-Na melt, Na functions t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7417bcd5d4d53aa2696c17f298def3f0
https://doi.org/10.1007/s10854-005-4955-8
https://doi.org/10.1007/s10854-005-4955-8
Autor:
Kunimichi Omae, Yoichi Kawakami, A. Shikanai, Sg. Fujita, Takashi Mukai, Yukio Narukawa, Kazunobu Kojima
Publikováno v:
physica status solidi (b). 240:392-395
We investigated the hot carrier dynamics in InGaN multi-quantum wells using photoluminescence, time-resolved photoluminescence (TRPL) and white-light pump and probe methods at room temperature. The pump and probe spectra or ΔOD spectra have not refl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68296bb4d6d75b2bbefe995a1b0ddb0b
https://doi.org/10.1002/pssb.200303256
https://doi.org/10.1002/pssb.200303256
Autor:
Kunimichi Omae, A. Shikanai, Sg. Fujita, Giichi Marutsuki, Koichi Okamoto, Yoichi Kawakami, Takashi Mukai, Yukio Narukawa, Akio Kaneta
Publikováno v:
physica status solidi (b). 240:337-343
Optical properties induced by two major effects, potential fluctuation and piezoelectric fields, have been assessed to interpret the emission mechanism in low-dimensional nitride semiconductors because the former leads to the exciton/carrier localiza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3f5f57efde5f14f1dfb008a8d3fabd1
https://doi.org/10.1002/pssb.200303427
https://doi.org/10.1002/pssb.200303427
Publikováno v:
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 190(1):93-98
Carrier dynamics in two types of InGaN-based semiconductors were investigated using nondegenerated pump and probe spectroscopy. The samples consist of an In 0.1 Ga 0.9 N active layer, 30 nm thick (sample a) or an In 0.1 Ga 0.9 N/GaN multiple quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94ceb489d20d03468e09699265222443
http://hdl.handle.net/2433/6760
http://hdl.handle.net/2433/6760
Autor:
Kunimichi Omae, Koichi Okamoto, Takashi Mukai, Yukio Narukawa, Yoichi Kawakami, Akio Kaneta, Shigeo Fujita
Publikováno v:
Journal of Physics: Condensed Matter. 13:6993-7010
Recombination dynamics of spontaneous and stimulated emissions have been assessed in InGaN-based light emitting diodes (LEDs) and laser diodes (LDs), by employing time-resolved photoluminescence and pump and probe spectroscopy. As for an In0.02Ga0.98
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d94a0d0ee262bdf008707c5407762439
https://doi.org/10.1088/0953-8984/13/32/308
https://doi.org/10.1088/0953-8984/13/32/308
Publikováno v:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 82(1-3):188-193
Dynamical behavior of dense carriers has been assessed at room temperature (RT) in the InGaN multi quantum well (MQW) based laser diodes (LDs) by employing pump and probe (PP (b), x=0.2, y=0.05 and (c), x=0.3, y=0.05], whose stimulated emissions corr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f461cd8cfd094d5f461a7edf61e9d25b
http://hdl.handle.net/2433/4754
http://hdl.handle.net/2433/4754
Publikováno v:
Journal of the Society of Materials Science, Japan. 50:372-375
Dynamics of spontaneous and stimulated emissions in InGaN-based laser-diode (LD) structures have been assessed by employing time-resolved photoluminescence (TRPL) and pump & probe (P & P) spectroscopy at room temperature. The LDs are composed of InxG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e42c4e07d45969c87fd78291bb2336ae
https://doi.org/10.2472/jsms.50.372
https://doi.org/10.2472/jsms.50.372
Autor:
Koichi Okamoto, Kunimichi Omae, Kenichi Inoue, Sg. Fujita, Yoichi Kawakami, Yukio Narukawa, Tomoaki Izumi, S. Sajou, Akio Kaneta, Takashi Mukai
Publikováno v:
physica status solidi (a). 183:41-50
Time-resolved optical characterization is an indispensable tool to study the recombination mechanisms of excitons and/or carriers based on radiative, non-radiative, localization and many-body processes. In this paper, we review the instrumentation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6d42bca3ece4f4559f28b0c3f713e8f
https://doi.org/10.1002/1521-396x(200101)183:1<41::aid-pssa41>3.0.co
https://doi.org/10.1002/1521-396x(200101)183:1<41::aid-pssa41>3.0.co
Publikováno v:
physica status solidi (a). 178:331-336
Temperature dependence of radiative and non-radiative recombination times has been investigated in InxGa1–xN based light emitting devices by employing time-resolved luminescence spectroscopy. The mean In-composition (x value) assessed in this study
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::925ec25464769643baa69bc94f8b8e29
https://doi.org/10.1002/1521-396x(200003)178:1<331::aid-pssa331>3.0.co
https://doi.org/10.1002/1521-396x(200003)178:1<331::aid-pssa331>3.0.co