Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Kunimasa Uematsu"'
Autor:
Akira Yamaguchi, Kunimasa Uematsu, Kazumasa Ikenaga, Yasushi Fukuda, Akinori Ubukata, Hiroki Tokunaga, Toshiya Tabuchi, Yuichiro Kitamura, Koh Matsumoto, Shuichi Koseki
Publikováno v:
Journal of Crystal Growth. 310:3950-3952
High growth rate GaN of 28 μm/h was demonstrated by using an atmospheric pressure multi-wafer metal organic vapor phase epitaxy reactor. FWHM of X-ray diffraction of (0 0 2) and (1 0 2) reflection was about 250 and 400 arcsec for the layer grown wit
Autor:
Kunimasa Uematsu, Akira Yamaguchi, Nobuyasu Tomita, Akinori Ubukata, Kazutada Ikenaga, Nakao Akutsu, Takashi Orita, Yuichiro Kitamura, Satoshi Hasaka, Yoshiaki Inaishi, Yasushi Fukuda, Koh Matsumoto, Hiroki Tokunaga, Shuichi Koseki
Publikováno v:
physica status solidi c. 5:3017-3019
We describe an atmospheric-pressure MOVPE reactor with a capacity of 2 inch by 10 or 3 inch by 8. In this reactor, the parasitic reaction of particulate generation is suppressed by adopting a high-flow-speed design. As a result of suppressing of the
Publikováno v:
Japanese Journal of Applied Physics. 30:L1974
Penta-di-methyl-amino-tantalum (Ta[N(CH3)2]5), a new source chemical of Ta in TaO chemical vapor deposition (CVD), has been studied. TG and DTA measurements show that Ta[N(CH3)2]5 is chemically stable up to about 150°C and vaporizes at a temperature
Autor:
Shohei Koshiba, Kenji Higashiyama, Naoki Wada, Takayuki Yuasa, Yoshihiro Shintani, Kunimasa Uematsu, Shiro Sakai, Masayoshi Umeno, Yoshihiro Ueta
Publikováno v:
Japanese Journal of Applied Physics. 30:L396
A reactor for metalorganic chemical vapor deposition is newly developed. The reactor has an internal flow selector by which two out of four continuously flowing gases are selected. The gas switching is performed just by rotating the flow selector wit
Autor:
Tabuchi, Toshiya, Sawado, Yoshinori, Kunimasa Uematsu, Kunimasa Uematsu, Shohei Koshiba, Shohei Koshiba
Publikováno v:
Japanese Journal of Applied Physics; November 1991, Vol. 30 Issue: 11 pL1974-L1974, 1p