Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Kunikaza Izumi"'
Autor:
Kunikaza Izumi, Isaho Kamata, Toshiyuki Miyanagi, Tomonori Nakamura, Hidekazu Tsuchida, Tamotsu Jikimoto
Publikováno v:
Materials Science Forum. :721-724
We investigated the effect of high temperature annealing on the Schottky barrier height (Fb) and the ideality factor (n-factor) of a Mo contact. In a Mo contact, the Fb increased and the leakage current decreased by annealing at 600oC, while no incre
Autor:
Tomonori Nakamura, Katsunori Asano, Kunikaza Izumi, Hidekazu Tsuchida, R. Ishii, Koji Nakayama, Toshiyuki Miyanagi, Isaho Kamata, Yoshitaka Sugawara
Publikováno v:
Materials Science Forum. :97-100
In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing of the substrate surface, in-situ H2 etching and off-cut angle were found to influence the propagation of BPDs
Publikováno v:
Materials Science Forum. :323-326
We investigated the structure of the in-grown stacking faults (SFs) in the 4H-SiC epilayers. The in-grown SFs exhibited the photoluminescence (PL) peaks representing phonon replicas with bandgap of 2.710 eV. The in-grown SFs were confirmed to be tria
Publikováno v:
Materials Science Forum. :379-382
Publikováno v:
Materials Science Forum. :229-232
Publikováno v:
Materials Science Forum. :565-568
Publikováno v:
Materials Science Forum. :131-136
Publikováno v:
Materials Science Forum. :261-264
Publikováno v:
Defect and Diffusion Forum. :111-116
Autor:
Hiroyuki Fujisawa, Isaho Kamata, A. Ueda, Kunikaza Izumi, Katsunori Ueno, Hidekazu Tsuchida, Takashi Tsuji, Syunsuke Izumi, Tamotsu Jikimoto
Publikováno v:
Materials Science Forum. :1141-1144