Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Kunihiro Ugajin"'
Publikováno v:
Journal of Photopolymer Science and Technology. 27:511-516
Autor:
Masamitsu Ito, Shingo Kanamitsu, Kazuki Hagihara, Yukiyasu Arisawa, Kunihiro Ugajin, Machiko Suenaga, Masato Saito, Keisuke Yagawa, Takeharu Motokawa, Sachiko Kobayashi
Publikováno v:
SPIE Proceedings.
Nanoimprint lithography (NIL) technology is in the spotlight as a next-generation semiconductor manufacturing technique for integrated circuits at 22 nm and beyond. NIL is the unmagnified lithography technique using template which is replicated from
Autor:
Masato Saito, Takeharu Motokawa, Keisuke Yagawa, Masamitsu Itoh, Yoshihito Kobayashi, Kunihiro Ugajin, Kazuki Hagihara, Machiko Suenaga
Publikováno v:
SPIE Proceedings.
ArF immersion lithography combined with double patterning has been used for fabricating below half pitch 40nm devices. However, when pattern size shrinks below 20nm, we must use new technology like quadruple patterning process or next generation lith
Autor:
Masato Saito, Yoshihito Kobayashi, Takeharu Motokawa, Keisuke Yagawa, Kunihiro Ugajin, Machiko Suenaga, Masamitsu Itoh, Kazuki Hagihara
Publikováno v:
SPIE Proceedings.
Photomask used for optical lithography has been developed for purpose of fabrication a pattern along with finer designed rules and increase the productivity. With regard to pattern fabrication on mask, EB (Electron beam) mask writer has been used bec
Autor:
Machiko Suenaga, Masato Saito, Koji Murano, Takeharu Motokawa, Tomotaka Higaki, Hidehiro Watanabe, Kosuke Takai, Osamu Ikenaga, Kunihiro Ugajin
Publikováno v:
SPIE Proceedings.
A new photomask technology with the Advanced Binary Film (ABF) by HOYA has been established. The film of relatively low thickness is expected to show the best lithography performance. The simple film structure of thin film of chemically amplified res
Publikováno v:
SPIE Proceedings.
The requirement for image placement accuracy on photomask has been rising. The ITRS road map says that we need to achieve 4.3nm accuracy in 2012 for HP 36nm device with single exposure process, further more we must achieve 3.0nm accuracy if double pa
Autor:
Hidehiro Watanabe, Masato Saito, Hideaki Nishino, Osamu Ikenaga, Tomotaka Higaki, Kunihiro Ugajin, Machiko Suenaga
Publikováno v:
SPIE Proceedings.
We achieved highly accurate Local CD in the vicinity of 1nm with the newly developed low sensitivity chemically amplified resist (CAR) for the e-beam reticle writer, EBM-6000. We applied shot noise model to estimate Line Edge Roughness (LER). Accordi
Publikováno v:
SPIE Proceedings.
The performance of electron beam reticle writer EBM-5000(NFT) was examined with higher current density. The current density was raised up to 70A/cm 2 against to its standard current density 50A/cm 2 , and sufficiently good results were obtained with