Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Kunihiko Uwai"'
Autor:
Tomoaki Kawamura, Yoshiyuki Tsusaka, Seiji Fujikawa, Yoshio Watanabe, Yuichi Utsumi, Kunihiko Uwai, Yasushi Kagoshima, Junji Matsui
Publikováno v:
Journal of Crystal Growth. 221:106-110
Because of the difficulties of using electron-based techniques in the metalorganic vapor-phase epitaxy (MOVPE) environment, an in situ X-ray diffractometer that combines a goniometer and reactor chamber was developed. Consequent measurements of P-ric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cca58080b33a6f1a9700a313adbce101
https://doi.org/10.1016/s0022-0248(00)00657-6
https://doi.org/10.1016/s0022-0248(00)00657-6
Publikováno v:
Thin Solid Films. :583-586
Dielectric response spectra of GaAs surfaces are determined using Kramers-Kronig transformation of the surface photoabsorption (SPA) spectra for the surface conversion caused by Ga-deposition and H adsorption on the As-stabilized (001)-(2×4) surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bc6fda22cfcc8d7405312a8b1937c9a
https://doi.org/10.1016/s0040-6090(97)00889-4
https://doi.org/10.1016/s0040-6090(97)00889-4
Publikováno v:
Journal of Crystal Growth. 174:544-549
During metalorganic vapor phase epitaxy, the anisotropic surface reflectance spectra are measured for (0 0 1) oriented bulk surfaces and hetero-epitaxial surfaces for III–V materials by taking the difference between the surface photo-absorption (SP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::333d576a5bff1903001dcfb2d03014f7
https://doi.org/10.1016/s0022-0248(97)00033-x
https://doi.org/10.1016/s0022-0248(97)00033-x
Autor:
Naoki Kobayashi, Kunihiko Uwai
Publikováno v:
Physical Review Letters. 78:959-962
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9ab5cfe515b51d7397cb6f3f0467de0
https://doi.org/10.1103/physrevlett.78.959
https://doi.org/10.1103/physrevlett.78.959
Publikováno v:
Journal of Crystal Growth. 170:225-229
This paper investigates the origin of the surface reflectance spectrum for the group-V-stabilized III–V surface during MOVPE by using surface photoabsorption. A chemical shift is observed for the stoichiometry sensitive peak in the anisotropic spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::893a6c8ac78e8df900a4e62475764509
https://doi.org/10.1016/s0022-0248(96)00520-9
https://doi.org/10.1016/s0022-0248(96)00520-9
Autor:
Naoki Kobayashi, Kunihiko Uwai
Publikováno v:
Applied Surface Science. 107:42-47
We compare surface photo-absorption spectra observed for various surface structural transformations on GaAs (001) and (111)B surfaces. Surface conversions investigated here are (i) from (2×4) to (3×1) caused by Ga deposition, (ii) from (2 × 4) to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1353ac91f88b2c13dcea003c84929b2b
https://doi.org/10.1016/s0169-4332(96)00495-3
https://doi.org/10.1016/s0169-4332(96)00495-3
Publikováno v:
Applied Surface Science. :412-416
Nitridation of GaAs (001) surfaces grown by molecular beam epitaxy is observed by detecting the surface reflectance change caused by the formation of Ga-N and As-N bonds. Nitridation is performed by exposing (4 × 2) or (2 × 4) surfaces to atomic ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c8129dc3f8cc37802c5b1be8cfe57b
https://doi.org/10.1016/0169-4332(96)00310-8
https://doi.org/10.1016/0169-4332(96)00310-8
Autor:
Kunihiko Uwai, Naoki Kobayashi
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:879-884
Surface reflectance spectra are observed for H‐adsorbed GaAs (001) surfaces. Atomic hydrogen produced with a hot tungsten filament is adsorbed on the (2×4) surface, converting it to (1×1). Reflectance difference (anisotropy) spectra show an enhan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb447deedace479a3f6f3381d4da5fde
https://doi.org/10.1116/1.580407
https://doi.org/10.1116/1.580407
Autor:
Kunihiko Uwai, Naoki Kobayashi
Publikováno v:
Journal of Crystal Growth. 150:101-106
Evolution of surface structures during conversion from various As-stabilized surfaces to Ga-stabilized ones is observed by surface photo-absorption. Desorption of As dimers parallel to [110] is observed during the structural change of c(4 × 4) and (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::545755f5c40a8f2cd888685ef70fda08
https://doi.org/10.1016/0022-0248(95)80189-j
https://doi.org/10.1016/0022-0248(95)80189-j
Autor:
Naoki Kobayashi, Kunihiko Uwai
Publikováno v:
Applied Surface Science. :290-297
Surface photo-absorption is used to observe the changes in isotropic and anisotropic surface dielectric responses caused by As desorption during surface conversion from c(4 × 4) to (2 × 4)γ of As-stabilized GaAs(001) surfaces. The anisotropic part
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cdfb052470100268a8b812ac4447635
https://doi.org/10.1016/0169-4332(94)90230-5
https://doi.org/10.1016/0169-4332(94)90230-5