Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Kunigunde H. Cherenack"'
Publikováno v:
IEEE Transactions on Electron Devices. 57:2381-2389
We fabricated back-channel-cut and back-channel-passivated hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) on clear-plastic (CP) foil substrates using a silicon nitride (SiN∞) deposition temperature of 300°C. The TFTs were fab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40cc80fdf16c143ad72a32e404c807b8
https://doi.org/10.1109/ted.2010.2056132
https://doi.org/10.1109/ted.2010.2056132
Publikováno v:
Journal of the Korean Physical Society. 54:415-420
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a40cc46e198959dfab5a0944d81577b9
https://doi.org/10.3938/jkps.54.415
https://doi.org/10.3938/jkps.54.415
Autor:
James C. Sturm, Sigurd Wagner, Ke Long, Kunigunde H. Cherenack, Jian-Zhang Chen, K. Rajan, B. Hekmatshoar, Mike Hack, A.Z. Kattamis
Publikováno v:
IEEE Electron Device Letters. 29:63-66
We have fabricated active-matrix organic light emitting diode (AMOLED) test arrays on an optically clear high-temperature flexible plastic substrate at process temperatures as high as 285 degC using amorphous silicon thin-film transistors (a-Si TFTs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d792926399f78845f56eb5f9c5bcef96
https://doi.org/10.1109/led.2007.910800
https://doi.org/10.1109/led.2007.910800
Autor:
Shawn M. O'Rourke, James C. Sturm, David R. Allee, Kunigunde H. Cherenack, A.Z. Kattamis, I-Chun Cheng, Sigurd Wagner, Sameer M. Venugopal, Doug Loy, B. Hekmatshoar, Ke Long
Publikováno v:
Journal of Display Technology. 3:304-308
The transition of thin-film transistor (TFT) backplanes from rigid plate glass to flexible substrates requires the development of a generic TFT backplane technology on a clear plastic substrate. To be sufficiently stable under bias stress, amorphous-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e73ef5835eda4db176647b5687d76972
https://doi.org/10.1109/jdt.2007.900935
https://doi.org/10.1109/jdt.2007.900935
Publikováno v:
IEEE Electron Device Letters. 28:1004-1006
We have made hydrogenated amorphous-silicon thin-film transistors (TFTs) at a process temperature of 300degC on free-standing clear-plastic foil substrates. The key to the achievement of flat and smooth samples was to design the mechanical stresses i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54a5f63a7d569eac5bd5480b19778c85
https://doi.org/10.1109/led.2007.907411
https://doi.org/10.1109/led.2007.907411
Autor:
Sigurd Wagner, Kunigunde H. Cherenack, James C. Sturm, B. Hekmatshoar, Helena Gleskova, A.Z. Kattamis, I-Chun Cheng
Publikováno v:
IEEE Electron Device Letters. 28:606-608
The stability of thin-film transistors (TFTs) of hydrogenated amorphous-silicon (a-Si:H) against gate-bias stress is improved by raising the deposition power and temperature of the silicon nitride gate dielectric. We studied the effects of power dens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcf54d0196dfd65fab86be72841d9362
https://doi.org/10.1109/led.2007.900078
https://doi.org/10.1109/led.2007.900078
Autor:
Yifei Huang, James C. Sturm, Bahman Hekmatshoar, Lin Han, Ting Liu, Sigurd Wagner, E. Lausecker, Kunigunde H. Cherenack
Publikováno v:
Ulis 2011 Ultimate Integration on Silicon.
While crystalline silicon FET's are the key enablers for the integrated circuit field, amorphous silicon thin film transistors are the key semiconductor of the large-area electronics field, also known as “macroelectronics.” This talk reviews the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b1977389e6410f51ea6685967bf48a2
https://doi.org/10.1109/ulis.2011.5758011
https://doi.org/10.1109/ulis.2011.5758011
Publikováno v:
2008 IEEE International Electron Devices Meeting.
We report amorphous silicon thin film transistors (a-Si TFT's) with an extrapolated DC saturation current half-life of more than 100 years, an improvement of over 1000 times compared to the previous art (1-4). This TFT half-life is higher than the lu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c980c1b4d2f200e36580d9fbaecb4f54
https://doi.org/10.1109/iedm.2008.4796621
https://doi.org/10.1109/iedm.2008.4796621
Autor:
Sigurd Wagner, B. Hekmatshoar, Ke Long, James C. Sturm, Kunigunde H. Cherenack, A.Z. Kattamis
Publikováno v:
2008 Device Research Conference.
An important technical issue associated with using a-Si for AMOLED displays is the direct voltage programming of the pixel by providing a constant current source to the OLED. Since only n-channel a-Si TFT's are available, this requires connecting the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf05038819872e05bb0656e360ad6c0d
https://doi.org/10.1109/drc.2008.4800822
https://doi.org/10.1109/drc.2008.4800822
Autor:
Ke Long, Sigurd Wagner, James C. Sturm, Kunigunde H. Cherenack, Alex Z. Kattamis, I-Chun Cheng
Publikováno v:
MRS Proceedings. 1078
The prospect of large-area electronics on polymers, for flexible applications requires a study of thin film fracture mechanisms. To fabricate thin-film transistor (TFT) backplanes on polymer foils the substrate must first be passivated to protect the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30291b735006f9495bec0248d202c67f
https://doi.org/10.1557/proc-1078-m14-02
https://doi.org/10.1557/proc-1078-m14-02