Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kunie Iseki"'
Publikováno v:
Integrated Ferroelectrics. 52:33-40
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48782369d07a9a681fd40b02215b4859
https://doi.org/10.1080/743845153
https://doi.org/10.1080/743845153
Publikováno v:
Applied Physics Letters. 82:3931-3933
We developed Al2O3/Si3N4 stacked insulators suitable for the advanced metal–oxide–semiconductor (MOS) devices. Ultrathin Si3N4 was prepared by direct nitridation of Si substrate using atomic nitrogen radicals. With this process, the film obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d27cd6b31a2de9e26fdda29158cae36
https://doi.org/10.1063/1.1579850
https://doi.org/10.1063/1.1579850
Publikováno v:
Japanese Journal of Applied Physics. 42:L267-L269
The ferroelectricity of sol-gel derived 80-nm Bi3.45La0.75Ti3O12 (BLT) films was significantly enhanced by low-pressure baking during the sol-gel process. The ferroelectricity enhancement was caused by the low-pressure baking after the drying process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19050f1dbcd5aac0a128246ffb309dc4
https://doi.org/10.1143/jjap.42.l267
https://doi.org/10.1143/jjap.42.l267
Publikováno v:
MRS Proceedings. 786
We introduced high-k Al2O3/Si3N4 buffer layer in MFIS (Metal-Ferroelectric-Insulator-Semiconductor) devices to reduce the leakage current though the buffer (I) layer. We prepared the buffer layer by nitridizing Si substrate by atomic nitrogen radical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::221ea2f35d529e1ab62e8b275cc3f4a0
https://doi.org/10.1557/proc-786-e9.6/c9.6
https://doi.org/10.1557/proc-786-e9.6/c9.6