Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Kung Liang Lin"'
Autor:
Fuh-Shyang Juang, Ming-Hong Tseng, Szu-Hao Chen, Yu-Sheng Tsai, Kung-Liang Lin, Apisit Chittawanij, Ching-Chiun Wang, Lin-Ann Hong, Pen-Chu Lin, Chien-Chih Chen, Feng-Yu Tsai
Publikováno v:
Journal of Physics and Chemistry of Solids. 83:135-139
In this paper, the flexible white organic light-emitting diodes (WOLED) was fabricated on polyethylene naphthalate (PEN) with structure of ITO/EHI608 (75 nm)/HTG-1 (10 nm)/3% EB502:0.8% EY53 (5 nm)/3% EB502 (35 nm)/Alq3 (10 nm)/LiF (0.8 nm)/Al (150 n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d6a2e8c319fad69e4a1b5beff0dd392
https://doi.org/10.1016/j.jpcs.2015.04.008
https://doi.org/10.1016/j.jpcs.2015.04.008
Autor:
Kung-Liang Lin, Yu-Kun Lin, Yuen-Wuu Suen, Jenh-Yih Juang, Yu-Ker Chern, Chih-Ming Lin, Sheng-Rui Jian, Yen-Fa Liao, Yu-Chun Chuang
Publikováno v:
Science of Advanced Materials. 7:1039-1044
Pressure-induced phase transitions in indium arsenide (InAs) at ambient temperature were investigated by using angular-dispersive X-ray diffraction (ADXRD) and Raman scattering under high pressure up to around 9.8(1) and 9.9(2) GPa, respectively, wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a02a58ab218ff80495cee5842476ae1f
https://doi.org/10.1166/sam.2015.2174
https://doi.org/10.1166/sam.2015.2174
Autor:
Chen Chen Chung, Kartika Chandra Sahoo, Edward Yi Chang, Chi Lang Nguyen, Binh Tinh Tran, Kung Liang Lin
Publikováno v:
Electronic Materials Letters. 10:1063-1067
In this paper, we present the effect of multiple thin high-low-high-temperature AlN (HLHT AlN) nucleation layers on GaN film quality. A 1.9-μm-thick GaN film grown on Si (111) substrate shows that the multiple HLHT AlN nucleation layers have a signi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cacc27d7140c758e56ac73a6c06119df
https://doi.org/10.1007/s13391-014-3164-0
https://doi.org/10.1007/s13391-014-3164-0
Publikováno v:
Journal of Crystal Growth. 401:648-651
Low stress, low defect density GaN was successfully grown on circle array patterned Si (111) substrate using AlN as the buffer followed by two steps growth of the GaN film. Raman measurement shows a reduction of in plane biaxial stress for the GaN fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10590cece0f6cd2ca4187cdf0eaae1a2
https://doi.org/10.1016/j.jcrysgro.2014.01.079
https://doi.org/10.1016/j.jcrysgro.2014.01.079
Autor:
Binh Tinh Tran, Ming Hung Han, Kung Liang Lin, Hung Wei Yu, Chun-Yen Chang, Chen Chen Chung, Yen Teng Ho, Edward Yi Chang
Publikováno v:
Electronic Materials Letters. 10:963-967
In this study, we investigate the effect of the shading factor of the front grid pattern on concentrated solar cell efficiency, taking the trade-off between the series resistance of the electrodes and the amount of incident light into consideration.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::068fbb1ff375aa51d7d79b34ff7d7b85
https://doi.org/10.1007/s13391-014-3201-z
https://doi.org/10.1007/s13391-014-3201-z
Autor:
Yuen Wuu Suen, Kung Liang Lin, Hwo-Shuenn Sheu, Yu Ker Chern, Jenh-Yih Juang, Sheng-Rui Jian, Yen Fa Liao, Chih-Ming Lin, C. H. Hsu
Publikováno v:
Journal of Alloys and Compounds. 604:298-303
The high pressure induced phase transition in bulk Zn0.98Mn0.02O at ambient temperature have been investigated using angular-dispersive X-ray diffraction (ADXRD) under high pressure up to around 13.80 GPa. For loading run, in situ ADXRD measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03efa759a345ceea724d6d164d4bbbd2
https://doi.org/10.1016/j.jallcom.2014.03.055
https://doi.org/10.1016/j.jallcom.2014.03.055
Autor:
Yen Teng Ho, Peichen Yu, Kung Liang Lin, Binh Tinh Tran, Chen Chen Chung, Hau-Vei Han, Edward Yi Chang, Hao-Chung Kuo, Hong Quan Nguyen, Hung Wei Yu
Publikováno v:
Electronic Materials Letters. 10:457-460
This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) fabricated by a novel chemical solution. With the anti-reflective feature at long wavelength and down-conversion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f20a7056f67021147c3de6561f64c2d6
https://doi.org/10.1007/s13391-013-3202-3
https://doi.org/10.1007/s13391-013-3202-3
Publikováno v:
Advanced Materials Research. 853:28-33
Nanocomposite samples containing epoxy resin, glass fiber and 0~2 wt.% SiO2 nanopowder are prepared. The effects of SiO2 addition on the chemical resistance, glass transition temperature (Tg) and dynamic mechanical properties of the various samples a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f39cfaba3871ae0b63145695aee1e58
https://doi.org/10.4028/www.scientific.net/amr.853.28
https://doi.org/10.4028/www.scientific.net/amr.853.28
Publikováno v:
International Journal of Heat and Mass Transfer. 65:339-347
We studied the flow field of a jet impingement on a rotating heated disk to simulate the flow field surrounding the rotating disk of a chemical vapor deposition (CVD) reactor, which is widely used for large-scale production of thin-films and semicond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36c1a8e946521f67b40b6a3946587716
https://doi.org/10.1016/j.ijheatmasstransfer.2013.06.018
https://doi.org/10.1016/j.ijheatmasstransfer.2013.06.018
Publikováno v:
Applied Mechanics and Materials. 459:34-39
This study investigates the resulting nanocomposite material formed by hot-forming and molding epoxy resin containing diluent, nanosilica powder, and hardener. The effects of different processing conditions on the composite material, such as post-pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a01cae227862555f24ec9b5ba4a8fd6d
https://doi.org/10.4028/www.scientific.net/amm.459.34
https://doi.org/10.4028/www.scientific.net/amm.459.34