Zobrazeno 1 - 10 of 79 pro vyhledávání: '"Kung‐Yen Lee"'
1
Akademický článek
The performance analysis of the low‐speed direct‐drive generators for harvesting current energy
Autor: Po‐Yu Chen, Kung‐Yen Lee, Po‐Chun Huang, Jia‐Han Li, Forng‐Chen Chiu, Jing‐Fa Tsai, Shu‐Ting Hsu
Publikováno v: IET Renewable Power Generation, Vol 17, Iss 2, Pp 305-316 (2023)
Abstract The simulations and experiments for two 400 W low‐speed direct‐drive permanent magnet synchronous generators (PMSGs) installed in a Floating Kuroshio Turbine (FKT) were implemented. The towing tank experiments were carried out at Nationa
Externí odkaz: https://doaj.org/article/3fb8404a5d3e4ed1a1a868647ce86109
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2
Akademický článek
Review of Silicon Carbide Processing for Power MOSFET
Autor: Catherine Langpoklakpam, An-Chen Liu, Kuo-Hsiung Chu, Lung-Hsing Hsu, Wen-Chung Lee, Shih-Chen Chen, Chia-Wei Sun, Min-Hsiung Shih, Kung-Yen Lee, Hao-Chung Kuo
Publikováno v: Crystals, Vol 12, Iss 2, p 245 (2022)
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention
Externí odkaz: https://doaj.org/article/ea30f2d9453544bbba98c2ef710e8e71
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3
Akademický článek
Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures
Autor: Chia-Yuan Chen, Yun-Kai Lai, Kung-Yen Lee, Chih-Fang Huang, Shin-Yi Huang
Publikováno v: Micromachines, Vol 12, Iss 7, p 756 (2021)
This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and s
Externí odkaz: https://doaj.org/article/ff4622c6085f401fb10232f4dce4be60
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4
Akademický článek
Time Series Analysis Using Composite Multiscale Entropy
Autor: Kung-Yen Lee, Chun-Chieh Wang, Shiou-Gwo Lin, Chiu-Wen Wu, Shuen-De Wu
Publikováno v: Entropy, Vol 15, Iss 3, Pp 1069-1084 (2013)
Multiscale entropy (MSE) was recently developed to evaluate the complexity of time series over different time scales. Although the MSE algorithm has been successfully applied in a number of different fields, it encounters a problem in that the statis
Externí odkaz: https://doaj.org/article/5f7e059068624055a5aa4fd5b706eb83
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6
1100 V, 22.9 mΩcm2 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation
Autor: Kung-Yen Lee, Wei-Chen Chen, Bing-Yue Tsui, Jia-Wei Hu, Jheng-Yi Jiang, Tian-Li Wu, Chih-Fang Huang
Publikováno v: IEEE Transactions on Electron Devices. 68:5009-5013
This work demonstrates a trench isolated lateral double-implanted MOSFET (LDMOS) on Si-face in 4H-silicon carbide (SiC). A device $\vphantom {_{\int _{}}}$ where ${L}_{\textit {ch}} = 0.8\,\,\mu \text{m}$ and ${L}_{d} = 12\,\,\mu \text{m}$ shows an $
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::644cfe45678af588f315d93e76c7fe71
https://doi.org/10.1109/ted.2021.3101184
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7
Demonstration of CMOS Integration With High-Voltage Double-Implanted MOS in 4H-SiC
Autor: Chih-Fang Huang, Jia-Ching Hung, Bing-Yue Tsui, Jheng-Yi Jiang, Kang-Min Lo, Kung-Yen Lee
Publikováno v: IEEE Electron Device Letters. 42:78-81
In this work, we demonstrate CMOS integration that is fully compatible with a commercial double-implanted MOS (DMOS) process in 4H-SiC without requiring additional masks and cost. The characteristics of the NMOS, the PMOS, the CMOS inverter, and the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::608072e706539cac8fdae8d81dcb6494
https://doi.org/10.1109/led.2020.3038179
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