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A 500-MHz DDR High-Performance 72-Mb 3-D SRAM Fabricated With Laser-Induced Epitaxial c-Si Growth Technology for a Stand-Alone and Embedded Memory Application

Autor: Kinam Kim, Hoon Lim, Soon-Moon Jung, Kun-Ho Kwak

Publikováno v: IEEE Transactions on Electron Devices. 57:474-481

For the first time, the smallest 3-D stacked six-transistor (6T) static-random-access-memory (SRAM) cell technology is successfully developed by using a laser crystallization process to grow perfect single-crystal Si layers on the amorphous dielectri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dc4546035f681696dfca6e74544e6aa8
https://doi.org/10.1109/ted.2009.2037368

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High Speed and Highly Cost effective 72M bit density S3 SRAM Technology with Doubly Stacked Si Layers, Peripheral only CoSix layers and Tungsten Shunt W/L Scheme for Standalone and Embedded Memory

Autor: Byoungkeun Son, Han-Byung Park, Hoon Lim, Jonghoon Na, Changmin Hong, Kun-Ho Kwak, Soon-Moon Jung, Kinam Kim, Jae-Joo Shim, Chadong Yeo

Publikováno v: 2007 IEEE Symposium on VLSI Technology.

Highly cost effective and high speed 72M bit density S3 SRAM technology was successfully achieved for standalone memory and embedded memory with selective epitaxial growth of Si films, low thermal SSTFT process , periphery only Co salicidation, and W

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6af11aec8055bb6f612a80983553d20a
https://doi.org/10.1109/vlsit.2007.4339736

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Highly area efficient and cost effective double stacked S/sup 3/(stacked single-crystal Si) peripheral CMOS SSTFT and SRAM cell technology for 512M bit density SRAM

Autor: Jae-Hoon Jang, Byung-Il Ryu, Hoosung Cho, Sung-Jin Kim, Kinam Kim, Jonghoon Na, Bonghyun Choi, Chadong Yeo, Yongha Kang, Dae-Gi Bae, Young-Chul Chang, Kun-Ho Kwak, Soon-Moon Jung, Jae-Hun Jeong, Hoon Lim, Jong-Hyuk Kim, Wonseok Cho

Publikováno v: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

For the first time, the highest density SRAM, such as 512M bit SRAM, is developed by implementing the smallest 25F/sup 2/S/sup 3/ SRAM cell technology, whose cell size is 0.16/spl mu/m/sup 2/, and area saving peripheral SSTFT (stacked single-crystal

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7150ac74da5f9f23c1a9b566f0746441
https://doi.org/10.1109/iedm.2004.1419128

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Fabrication and characteristics of novel load PMOS SSTFT (Stacked Single-crystal Thin Film Transistor) for 3-Dimensional SRAM memory cell

Autor: Bonghyun Choi, J.H. Moon, Hoon Lim, Kun-Ho Kwak, B.J. Hwang, Y.H. Kang, Wonseok Cho, Sungjee Kim, Jae-Hun Jeong, W.R. Jung, Chadong Yeo, Keunwoo Kim, Ji-Hoon Kim, Jonghoon Na, Soon Moon Jung, J.H. Jang

Publikováno v: 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).

The PMOS SSTFT (stacked single-crystal thin film transistor) is developed for achieving the smallest SRAM cell size, such as 45F/sup 2/, and low power mobile applications with the single crystallization technology of the Si thin films on the insulato

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e9a13996ad2fd56b30e4be5208f8d471
https://doi.org/10.1109/soi.2004.1391586

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High Density and Ultra-Low Power Mobile SRAM Using the Novel Double S3 (Stacked Single-crystal Silicon) Technology and KrF lithography

Autor: Wonseok Cho, Kinam Kim, Jong-Hyuk Kim, Jae Hoon Jeong, Bonghyun Choi, Joo Young Kim, Jae-Joo Shim, Sunghyun Kwon, Soon-Moon Jung, Kun-Ho Kwak, Hoon Lim, Hoosung Cho, Changmin Hong, Jin-Ho Kim

Publikováno v: Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b23c1f743d2fa187ad6c356ce7bb65b1
https://doi.org/10.7567/ssdm.2005.h-3-1

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Novel 3-dimensional 46F/sup 2/ SRAM technology with 0.294um/sup 2/ S/sup 3/ (stacked single-crystal Si) cell and SSTFT (stacked single-crystal thin film transistor)

Autor: Byeong-In Choi, B.J. Hwang, Ji-Hyun Jeong, Y.H. Kang, Hoon Lim, J.H. Moon, Suk-Joon Kim, J.H. Jang, Je-Yoon Kim, Kinam Kim, Jonghoon Na, Jung Won-Joo, Wonsuk Cho, Kun-Ho Kwak, Seok-Min Jung, Chadong Yeo

Publikováno v: Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

We have realized a 46F/sup 2/ SRAM cell size of 0.294 /spl mu/m/sup 2/ with 80 nm technology and single stack S/sup 3/ cell technology. SSTFTs and vertical node contacts are major keys in the S/sup 3/ cell technology. The stacked single crystal silic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8aa6adf4bc64386c320965a4ac8e7434
https://doi.org/10.1109/essder.2004.1356587

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Highly manufacturable 100 nm 6T low power SRAM with single poly-Si gate technology

Autor: Sunae Seo, Hyung-Guel Kim, Kun-Ho Kwak, Duk-ha Park, B.J. Hwang, Yang-Soo Son, K.N. Kim, Kyoung-Min Koh, J.H. Jang, J.Y. Lee

Publikováno v: 2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672).

As scaling down the device, it is difficult to control the standby leakage and device performance at the same time. In this work, 6-transistor SRAM cell using buried channel PMOS technology was introduced and the device for low power consumption was

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e7d80f29d54e6f8c3aec6f18ea1c41a7
https://doi.org/10.1109/vtsa.2003.1252553

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Ultra-low power and high speed SRAM for mobile applications using single Poly-Si gate 90 nm CMOS technology

Autor: Kinam Kim, J.H. Jang, Hyung-Guel Kim, Kyoung-Min Koh, D. Park, Kun-Ho Kwak, Yang-Soo Son, G.H. Han, B.J. Hwang

Publikováno v: 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

High speed and ultra-low power SRAM using single gate CMOS technology was developed. The drive currents of NMOSFET and PMOSFET were 410 /spl mu/A//spl mu/m and 205 /spl mu/A//spl mu/m, respectively. The random access time of 17 ns at 1.65 V operation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eb216fc1bb839bd3a0555cf4f0bb9987
https://doi.org/10.1109/vlsit.2003.1221089

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