Zobrazeno 1 - 10 of 69 pro vyhledávání: '"Kun Sik Park"'
1
Akademický článek
Human body model electrostatic discharge tester using metal oxide semiconductor controlled thyristors
Autor: Dong Yun Jung, Kun Sik Park, Sang In Kim, Sungkyu Kwon, Doo Hyung Cho, Hyun Gyu Jang, Jongil Won, Jong-Won Lim
Publikováno v: ETRI Journal, Vol 45, Iss 3, Pp 543-550 (2023)
Electrostatic discharge (ESD) testing for human body model tests is an essential part of the reliability evaluation of electronic/electrical devices and components. However, global environmental concerns have called for the need to replace the mercur
Externí odkaz: https://doaj.org/article/08363962069247b4ae0a73da2b966e50
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2
Akademický článek
LTCC-Based DC-DC Converter for Reduction of Switching Noise and Radiated Emissions
Autor: Hyun Gyu Jang, Dong Yun Jung, Yong Ha Lee, Doohyung Cho, Kun Sik Park, Jong-Won Lim, Wonkyo Kim, Joomin Park, Ick-Jae Yoon
Publikováno v: Journal of Electromagnetic Engineering and Science, Vol 23, Iss 3, Pp 251-258 (2023)
In this study, a low-temperature co-fired ceramic (LTCC)-based direct current (DC)-DC converter is proposed for reducing stray inductance and mitigating electromagnetic interference. The dominant radiating loop of the proposed LTCC-based DC-DC conver
Externí odkaz: https://doaj.org/article/9068c70eb5ed4f63bbb04566028429f0
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3
Akademický článek
Power Limiter with PIN Diode Embedded in Cavity to Minimize Parasitic Inductance
Autor: Dong Yun Jung, Kun Sik Park, Jong Il Won, Doohyung Cho, Sungkyu Kwon, Hyun Gyu Jang, Jong-Won Lim
Publikováno v: Journal of Electromagnetic Engineering and Science, Vol 22, Iss 6, Pp 686-688 (2022)
This letter introduces a power limiter that limits the input power to protect the receiver when a large power enters the radio frequency receiver. When the power limiter receives a large power signal, a positive-intrinsic-negative (PIN) diode is turn
Externí odkaz: https://doaj.org/article/19e9076d3be44b3eb9cdb7ab52f45fdf
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4
Akademický článek
Theoretical and experimental analysis of a venting clip to reduce stray inductance in high‐power conversion applications
Autor: Hyun Gyu Jang, Dong Yun Jung, Sungkyu Kwon, Doohyung Cho, Kun Sik Park, Jong‐Wong Lim
Publikováno v: ETRI Journal, Vol 43, Iss 6, Pp 1103-1112 (2021)
AbstractIn this study, we present a venting clip for high‐power applications that is intended to reduce stray inductance. To reduce the stray inductance of packages in high‐power applications, the proposed venting clip features slots are inserted
Externí odkaz: https://doaj.org/article/084aeffcd98c45a3a5aa3edd4ad6ea39
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5
Akademický článek
Power module stray inductance extraction: Theoretical and experimental analysis
Autor: Dong Yun Jung, Hyun Gyu Jang, Doohyung Cho, Sungkyu Kwon, Jong Il Won, Seong Hyun Lee, Kun Sik Park, Jong‐Won Lim, Joung Hwan Bae, Yun Hwa Choi
Publikováno v: ETRI Journal, Vol 43, Iss 5, Pp 891-899 (2021)
AbstractWe propose a stray inductance extraction method on power modules of the few‐kilovolts/several‐hundred‐amperes class using only low voltages and low currents. The method incorporates a double‐pulse generator, a level shifter, a switchi
Externí odkaz: https://doaj.org/article/74edf23511244c428d5c7e8493938dde
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7
Power module stray inductance extraction: Theoretical and experimental analysis
Autor: Sungkyu Kwon, Jong-Won Lim, Hyun Gyu Jang, Kun Sik Park, Jong Il Won, Doohyung Cho, Yun Hwa Choi, Dong Yun Jung, Joung Hwan Bae, Seong Hyun Lee
Publikováno v: ETRI Journal, Vol 43, Iss 5, Pp 891-899 (2021)
We propose a stray inductance extraction method on power modules of the few‐kilovolts/several‐hundred‐amperes class using only low voltages and low currents. The method incorporates a double‐pulse generator, a level shifter, a switching devic
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91c70bd7d9cebb5034fcfd7ee00bfe9d
https://doaj.org/article/74edf23511244c428d5c7e8493938dde
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10
Improvement in Long-Term and High-Temperature Retention Stability of Ferroelectric Field-Effect Memory Transistors With Metal–Ferroelectric–Metal–Insulator–Semiconductor Gate-Stacks Using Al-Doped HfO2 Thin Films
Autor: Seung Eon Moon, Dae-Hong Min, Jong Il Won, Sung-Min Yoon, Kun Sik Park, So-Jung Yoon
Publikováno v: IEEE Transactions on Electron Devices. 67:499-504
Nonvolatile memory characteristics of the ferroelectric field-effect transistors (FeFETs) were investigated by introducing the metal–ferroelectric–metal–insulator–semiconductor (MFMIS) gate-stacks, employing Al-doped HfO2 (Al:HfO2) ferroelect
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7c958cd1b827185e6030c53dd6a79a58
https://doi.org/10.1109/ted.2019.2961117
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