Zobrazeno 1 - 10
of 114
pro vyhledávání: '"Kun Lin Lin"'
Autor:
Shang Yu Tsai, Po‐Hsien Tseng, Chun Chi Chen, Cheng‐Ming Huang, Hung‐Wei Yen, Yi‐Sheng Chen, Kun‐Lin Lin, Ranming Niu, Yu‐Sheng Lai, Fu‐Hsiang Ko
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 36, Pp n/a-n/a (2024)
Abstract Green energy collection is crucial for achieving future net‐zero carbon emissions, with energy harvesting being a key solution. Silicon, a widely used p‐type semiconductor doped with boron ions, is prevalent in modern electronics. Howeve
Externí odkaz:
https://doaj.org/article/d3efc12db150407e8caf02ff9af5bebb
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 11, Pp n/a-n/a (2024)
Abstract The heat dissipation optimization process is a crucial element in high power high electron mobility transistor (HEMT) components fabricated using the Gallium Nitride grown on silicon (Si) substrate. In this study, the Si substrate is thinned
Externí odkaz:
https://doaj.org/article/b0d353cd26684ead9926d63917b2dc51
Autor:
Samiran Bairagi, Jui-Che Chang, Fu-Gow Tarntair, Wan-Yu Wu, Gueorgui K. Gueorguiev, Edward Ferraz de Almeida, Jr., Roger Magnusson, Kun-Lin Lin, Shao-Hui Hsu, Jia-Min Shieh, Jens Birch, Ray-Hua Horng, Kenneth Järrendahl, Ching-Lien Hsiao
Publikováno v:
Materials Today Advances, Vol 20, Iss , Pp 100422- (2023)
Zinc aluminogallate, Zn(AlxGa1−x)2O4 (ZAGO), a single-phase spinel structure, offers considerable potential for high-performance electronic devices due to its expansive compositional miscibility range between aluminum (Al) and gallium (Ga). Direct
Externí odkaz:
https://doaj.org/article/5c7e31a3c7d1413ab12e36af82c6e64a
Publikováno v:
Ceramics, Vol 5, Iss 1, Pp 44-54 (2022)
In this study, 10 wt.% ceramics—Al2O3, La2O3, Y2O3, MgO, and TiO2—were employed as additives for amorphous SiO2 after pressing and annealing at 1300 °C. The amorphous SiO2 changed to cristobalite SiO2. Through X-ray diffraction, scanning electro
Externí odkaz:
https://doaj.org/article/ac48116ad5294166920ccb9ead45492d
Publikováno v:
Processing and Application of Ceramics, Vol 13, Iss 2, Pp 115-123 (2019)
Reactions between different kinds of ceramics and silicon were studied to evaluate ceramics as candidates for their use in the process of silicon-crystal growth. Three types of ceramic plates, Al2O3, ZrO2 and quartz (SiO2), were put into contact with
Externí odkaz:
https://doaj.org/article/c30ad91c78634d548d39f4f6865c6c54
Publikováno v:
Processing and Application of Ceramics, Vol 13, Iss 1, Pp 79-88 (2019)
Powdered mixtures of CaO, ZrO2 and Al2O3 in various ratios were hot pressed. The mixtures reacted with titanium at 1600 °C for 30 min in argon to evaluate the suitable ceramic crucibles for casting of titanium. The interfacial microstructures betwee
Externí odkaz:
https://doaj.org/article/ea4c8e5177ab4d4594219bcd5a2b5af0
Publikováno v:
Results in Materials, Vol 6, Iss , Pp 100093- (2020)
Three films of Ni with thicknesses of 100, 300, and 500 nm were deposited on an Al2O3 base and direct bonded with Al to form high-power electronic substrates for comparison. The microstructures of Al/Al2O3 joints were evaluated using a scanning el
Externí odkaz:
https://doaj.org/article/e6ff55b10068419d8d3c5ca2408fb874
Autor:
Loganathan Ravi, Muzafar Ahmad Rather, Kun-Lin Lin, Chien-Ting Wu, Tung-Yuan Yu, Kun-Yu Lai, Jen-Inn Chyi
Publikováno v:
ACS Applied Electronic Materials. 5:146-154
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::941c17c47ca35aa133bf578a46dc5ab5
https://doi.org/10.1021/acsaelm.2c01078
https://doi.org/10.1021/acsaelm.2c01078
Autor:
Tsung-Ta Wu, Wen-Hsien Huang, Chih-Chao Yang, Hung-Chun Chen, Tung-Ying Hsieh, Wei-Sheng Lin, Ming-Hsuan Kao, Chiu-Hao Chen, Jie-Yi Yao, Yi-Ling Jian, Chiung-Chih Hsu, Kun-Lin Lin, Chang-Hong Shen, Yu-Lun Chueh, Jia-Min Shieh
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
Abstract Development of manufacture trend for TFTs technologies has focused on improving electrical properties of films with the cost reduction to achieve commercialization. To achieve this goal, high-performance sub-50 nm TFTs-based MOSFETs with ON-
Externí odkaz:
https://doaj.org/article/dfca7c0d50a149839d75f7508a8ac08d
Publikováno v:
Ceramics International. 48:28889-28897
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83d77dcac09bb362dc385e9399afa38e
https://doi.org/10.1016/j.ceramint.2022.04.039
https://doi.org/10.1016/j.ceramint.2022.04.039