Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Kun I. Chou"'
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:2810-2813
We report a low-temperature InP p-MOS with a high capacitance density of 2.7 µF/cm2, low leakage current of 0.77 A/cm2 at 1 V and tight current distribution. The high-density and low-leakage InP MOS was achieved by using high-κ TiLaO dielectric and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03acf4d881dbc7c0857a62c921f32298
https://doi.org/10.1166/jnn.2015.9208
https://doi.org/10.1166/jnn.2015.9208
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:1486-1489
We demonstrate a low-voltage driven, indium-gallium-zinc oxide thin-film transistor using high-κ LaAlO3 gate dielectric. A low VT of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm2/Ns and low operation voltage o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::032e29a58a7d51d71fa9efccfb1086cc
https://doi.org/10.1166/jnn.2015.9066
https://doi.org/10.1166/jnn.2015.9066
Publikováno v:
Current Applied Physics. 14:139-143
In this study, we report a resistive random access memory (RRAM) using trilayer SiO x /a-Si/TiO y film structure. The low switching energy of 6 cycles are simultaneously achieved in this RRAM device. Such good performance can be ascribed to the use o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e4fee0469a2e3c27b34a26356596fb8
https://doi.org/10.1016/j.cap.2013.10.019
https://doi.org/10.1016/j.cap.2013.10.019
Publikováno v:
Microelectronic Engineering. 109:35-38
Self-aligned and gate-first TiLaO/La2O3n-MOSFET shows an equivalent oxide thickness (EOT) of 0.57nm.Small EOT can be reached using La silicate to suppress the formation of low-? defective interface.This low-EOT MOSFET exhibits the potential to integr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::923a15bcbb124839173052b7916e6f20
https://doi.org/10.1016/j.mee.2013.03.082
https://doi.org/10.1016/j.mee.2013.03.082
Publikováno v:
Solid-State Electronics. 82:111-114
We report a gate-first TiLaO/CeO2 n-MOSFET with an equivalent oxide thickness (EOT) of only 0.56 nm and threshold voltage (Vt) of 0.31 V. This small EOT MOSFET was achieved by employing high-κ CeO2 interfacial layer with high bond enthalpy (795 kJ/m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3525c730df6c96de126b91e9b3d4bd22
https://doi.org/10.1016/j.sse.2013.02.003
https://doi.org/10.1016/j.sse.2013.02.003
Publikováno v:
2013 IEEE International Conference of Electron Devices and Solid-state Circuits.
High uniform current distribution, good endurance, and low 28 μW switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices on flexible polyimide substrate. The good performances are attributed to the nitrog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9d51a72f0cc99eeb76d60846576aac7
https://doi.org/10.1109/edssc.2013.6628193
https://doi.org/10.1109/edssc.2013.6628193
Publikováno v:
2013 IEEE International Conference of Electron Devices and Solid-state Circuits.
This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-κ lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-κ LaLuO3 into an IGZO TFT. The resulting La
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6468b05621faeedc24e9405c79755dd
https://doi.org/10.1109/edssc.2013.6628219
https://doi.org/10.1109/edssc.2013.6628219
Publikováno v:
2013 IEEE International Conference of Electron Devices and Solid-state Circuits.
We report a resistive random-access memory (RRAM) using stacked GeO2 and PZT. Under unipolar mode operation, the Ni/GeO2/PZT/TaN RRAM shows a good DC cycling of 2×103 cycles, 85°C retention, and large resistance window about 120x, which is better t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d1c40f061a8673ded13172ba22ffddc
https://doi.org/10.1109/edssc.2013.6628194
https://doi.org/10.1109/edssc.2013.6628194
Publikováno v:
2010 International Electron Devices Meeting.
We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 µW switching power (1.6 µA at 3 V; −0.5 nA at −2 V), excellent 105 cycling endurance, large on/off retention memory window >102 even at 85°C, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63f4747730b70a0946d616c980e008ae
https://doi.org/10.1109/iedm.2010.5703408
https://doi.org/10.1109/iedm.2010.5703408
Autor:
Kun-I CHOU, 周坤億
96
We research a novel 1000℃ stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10−5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V．s are simultaneously obtai
We research a novel 1000℃ stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10−5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V．s are simultaneously obtai
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/22553741401031927766
