Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Kumiko Oguni"'
Publikováno v:
しまね地域共生センター紀要 = Bulletin of Shimane Center for Enrichment through Community, the University of Shimane Junior College. 4:1-11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::f5c5dea2f6fe4eee5a5c43bfd56e07e6
http://id.nii.ac.jp/1377/00001718/
http://id.nii.ac.jp/1377/00001718/
Autor:
T. Takeda, Hiroichi Kawahira, Kumiko Oguni, H. Egawa, T. Morikawa, Shigeru Moriya, Hiroyuki Nakano, Tomonori Motohashi, Kazuya Iwase, Tetsuya Kitagawa, Masaki Yoshizawa, K. Nakayama, Shinji Omori, Shinichiro Nohdo, Shoji Nohama
Publikováno v:
SPIE Proceedings.
Proximity electron lithography (PEL) using the ultra-thin tri-layer resist system has been successfully integrated in our dual-damascene Cu/low-k interconnects technology for the 90-nm node. Critical comparison between conventional ArF lithography an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a877fb413ca1bb7ff52723e181fc6e29
https://doi.org/10.1117/12.601733
https://doi.org/10.1117/12.601733
Autor:
Kazuya Iwase, Kumiko Oguni, Hiizu Ohtorii, Hiroyuki Nakano, Masaki Yoshizawa, Shigeru Moriya, Hiroki Hane, Tetsuya Kitagawa, Keiko Amai
Publikováno v:
SPIE Proceedings.
Low-energy electron-beam proximity projection lithography (LEEPL) has been developed for sub-65 nm lithography. Critical dimension (CD) control of resist patterns is critical to be a production-worthy lithography technique. In this study, the LEEPL m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82ca0f4362fb276c149bd71b57d47824
https://doi.org/10.1117/12.536029
https://doi.org/10.1117/12.536029
Autor:
Hiroyuki Nakano, Shinichiro Nohdo, Kumiko Oguni, Tomonori Motohashi, Masaki Yoshizawa, Tetsuya Kitagawa, Shigeru Moriya
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39b23ff17195d487b09f0d47f0a8ccf1
https://doi.org/10.1117/12.484429
https://doi.org/10.1117/12.484429
Publikováno v:
SPIE Proceedings.
The technological systematics for low-energy electron-beam proximity-projection lithography (LEEPL) is discussed with particular focuses on the key ingredients such as mask, resist and alignment. We have developed a mechanically rigid 1X stencil mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7359529516680b0911ce6b9d7e17252
https://doi.org/10.1117/12.476996
https://doi.org/10.1117/12.476996
Autor:
Tetsuya Kitagawa, Shinji Omori, Hirohisa Niu, Hiroyuki Nakano, Kumiko Oguni, Masatoshi Kotera, Masaki Yoshizawa, Shigeru Moriya
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:3518
Exploring the resolution performance of various electron beam lithography with the acceleration voltage of 2–100kV showed that line edge roughness (LER) and resolution limit of resist patterns was in linear relation with blur of latent image profil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce8d382e0f2083f72f794bb48e414422
https://doi.org/10.1116/1.1815308
https://doi.org/10.1116/1.1815308
Autor:
Kumiko Oguni, Hiroyuki Nakano, Tetsuya Kitagawa, Keiko Amai, Masaki Yoshizawa, Shigeru Moriya, Shoji Nohama
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:136
The resolution-limiting factors in low-energy electron-beam proximity projection lithography were analyzed quantitatively using the blur of a Gaussian-shaped latent image (σQBP) as the resolution index. σQBP is the square root of the sum of squares
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d978d10b5366867931cea7b0bd12e45
https://doi.org/10.1116/1.1635850
https://doi.org/10.1116/1.1635850