Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Kumar Prasannajit Pradhan"'
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::821e236125517bdd1bb5675333467a93
https://doi.org/10.1109/icee56203.2022.10118310
https://doi.org/10.1109/icee56203.2022.10118310
Publikováno v:
IEEE Transactions on Electron Devices. 68:5518-5524
Quantum engineering in kesterite solar cells reveals a blending advancement keeping in mind that copper–zinc–tin–sulfide (CZTS)-based material requires high-research implementation as a replacement for CIGS materials. In this article, a quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c29cc632f375f3b7987083f3dd4ee037
https://doi.org/10.1109/ted.2021.3076034
https://doi.org/10.1109/ted.2021.3076034
Publikováno v:
IET Circuits, Devices and Systems, Vol 15, Iss 7, Pp 641-648 (2021)
An accurate electrical equivalent circuit model for boron‐substitution doped graphene field effect transistor (GFET) is proposed to analyse the effects of memoryless non‐linearity on transconductance. The proposed equivalent circuit model is veri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc3390e3261c5e9e886263556a1a7407
https://doaj.org/article/01e91616735846908fc72910bc4d7c15
https://doaj.org/article/01e91616735846908fc72910bc4d7c15
Publikováno v:
Solar Energy. 227:56-66
Kesterite materials Cu2ZnSn(SxSe1−x)4, Cu2ZnSnS4 and Cu2ZnSnSe4 have received considerable attention as absorber layers for photovoltaic cell applications. But they exhibit efficiencies lower than 12%. In this work, different possible loss mechanis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faeeb6ac0a3b30cbdaa6a45da7bc7c20
https://doi.org/10.1016/j.solener.2021.08.052
https://doi.org/10.1016/j.solener.2021.08.052
Self-Consistent Modeling of B or N Substitution Doped Bottom Gated Graphene FET With Nonzero Bandgap
Publikováno v:
IEEE Transactions on Electron Devices. 68:3658-3664
A phenomenological all region drain current model for boron (B) or nitrogen (N) substitution-doped bottom gated graphene field effect transistor (GFET) is developed. In this work, a self-consistent approach is utilized to obtain appropriate potential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7800b8fe62baa1fb31cc86c317143db
https://doi.org/10.1109/ted.2021.3080224
https://doi.org/10.1109/ted.2021.3080224
Publikováno v:
IEEE Sensors Journal. 21:2316-2323
In this paper, a feasibility estimation of inversion and tunneling based n-type dielectric modulated transistor has been extensively carried out for label free DNA detection. The sensing ability of the devices are investigated based on shift in thres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fd4a3bf8a1b5426796cf6cd71b358df
https://doi.org/10.1109/jsen.2020.3019103
https://doi.org/10.1109/jsen.2020.3019103
Autor:
Guru Prasad Mishra, Chinmay Dimri, Kumar Prasannajit Pradhan, G. P. Nikhil, P. K. Mohanty, S. Routray
Publikováno v:
Silicon. 13:2933-2941
FinFET structures of 10 nm technology node with promising design enhancements like hybrid spacer, raised source and drain extensions, and silicide interfaces have been analysed and compared. Analog figures of merit like drain current, transconductanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e74034ca82e9b49ca11cbc3862d77671
https://doi.org/10.1007/s12633-020-00608-w
https://doi.org/10.1007/s12633-020-00608-w
Publikováno v:
Silicon. 13:2655-2660
This paper extensively studies the spacer technology, including low-k/high-k, single/dual dielectrics on the device performances focusing on the leakage current. The tactical use of a spacer, introduction of a low bandgap material as a pocket on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64c8f7e31ff635b963c180052e483514
https://doi.org/10.1007/s12633-020-00618-8
https://doi.org/10.1007/s12633-020-00618-8
Publikováno v:
Silicon. 13:1059-1064
The primary purpose of this work is to study the effect of symmetric and asymmetric variation of underlap regions both on source and drain side of 3D SOI n-FinFET. Underlap length is proved to be a critical parameter of FinFET in deciding the leakage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c124e06fec507073c7fbdf037c8291
https://doi.org/10.1007/s12633-020-00495-1
https://doi.org/10.1007/s12633-020-00495-1
Publikováno v:
IEEE Sensors Journal. 20:5204-5212
In III-Nitride planar photosensitive devices (PSDs), proper engineering in polarization charges (PCs) are required in order to reduce detrimental effects on the devices. In this work, piezo-phototronic effects of PSDs are explored, giving more emphas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::844c49a693733f4fc367d1410b9a7b08
https://doi.org/10.1109/jsen.2020.2971005
https://doi.org/10.1109/jsen.2020.2971005