Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Kum HS"'
Autor:
Lee S; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Zhang X; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Abdollahi P; Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506, United States., Barone MR; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States., Dong C; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.; 2-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Yoo YJ; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Song MK; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Lee D; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Ryu JE; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Choi JH; Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea., Lee JH; Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea., Robinson JA; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.; 2-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Schlom DG; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States., Kum HS; Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea., Chang CS; Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea., Seo A; Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506, United States., Kim J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Publikováno v:
ACS nano [ACS Nano] 2024 Nov 12; Vol. 18 (45), pp. 31225-31233. Date of Electronic Publication: 2024 Oct 29.
Autor:
Kang JH; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Electronic Engineering, Inha University, Incheon, Republic of Korea., Shin H; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea., Kim KS; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Song MK; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Lee D; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Meng Y; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Saint Louis, MO, USA., Choi C; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA., Suh JM; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Kim BJ; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea., Kim H; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Hoang AT; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea., Park BI; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Zhou G; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA., Sundaram S; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA.; CNRS, Georgia Tech - CNRS IRL 2958, GT-Europe, Metz, France., Vuong P; CNRS, Georgia Tech - CNRS IRL 2958, GT-Europe, Metz, France., Shin J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Choe J; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea., Xu Z; Institute of Materials Science and Engineering, Washington University in Saint Louis, Saint Louis, MO, USA., Younas R; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA., Kim JS; Institute of Materials Science and Engineering, Washington University in Saint Louis, Saint Louis, MO, USA., Han S; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Saint Louis, MO, USA., Lee S; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Kim SO; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Saint Louis, MO, USA., Kang B; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Seo S; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Ahn H; Future Innovation Research Center, Korea Aerospace Research Institute, Daejeon, Republic of Korea.; Aerospace System Engineering, University of Science and Technology, Daejeon, Republic of Korea., Seo S; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Reidy K; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Park E; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Mun S; Department of Industrial Engineering, Jeonju University, Jeonju, Republic of Korea.; Convergence Institute of Human Data Technology, Jeonju University, Jeonju, Republic of Korea., Park MC; Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, Republic of Korea., Lee S; Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, Republic of Korea., Kim HJ; Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, Republic of Korea., Kum HS; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea., Lin P; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; College of Computer Science and Technology, Zhejiang University, Hangzhou, China., Hinkle C; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA., Ougazzaden A; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA.; CNRS, Georgia Tech - CNRS IRL 2958, GT-Europe, Metz, France., Ahn JH; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea. ahnj@yonsei.ac.kr., Kim J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu., Bae SH; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Saint Louis, MO, USA. sbae22@wustl.edu.; Institute of Materials Science and Engineering, Washington University in Saint Louis, Saint Louis, MO, USA. sbae22@wustl.edu.
Publikováno v:
Nature materials [Nat Mater] 2023 Dec; Vol. 22 (12), pp. 1470-1477. Date of Electronic Publication: 2023 Nov 27.
Autor:
Ji J; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea., Kwak HM; School of Electrical Engineering and Computer Science, Gwnagju Institute of Science and Technology, Gwangju, South Korea., Yu J; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea., Park S; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea., Park JH; Venture Business Laboratory, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya, 464-8603, Japan., Kim H; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea., Kim S; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea., Kim S; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea. sungkyu@sejong.ac.kr., Lee DS; School of Electrical Engineering and Computer Science, Gwnagju Institute of Science and Technology, Gwangju, South Korea. dslee66@gist.ac.kr., Kum HS; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea. hkum@yonsei.ac.kr.
Publikováno v:
Nano convergence [Nano Converg] 2023 Oct 21; Vol. 10 (1), pp. 49. Date of Electronic Publication: 2023 Oct 21.
Autor:
Cheng R; Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, China; Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, China. Electronic address: chengrq@whu.edu.cn., Kum HS; Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea. Electronic address: hkum@yonsei.ac.kr., He J; Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, China; Wuhan Institute of Quantum Technology, Wuhan 430206, China. Electronic address: He-jun@whu.edu.cn.
Publikováno v:
Science bulletin [Sci Bull (Beijing)] 2023 Jun 15; Vol. 68 (11), pp. 1087-1090. Date of Electronic Publication: 2023 May 10.
Autor:
Ji J; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea., Kwak HM; School of Electrical Engineering and Computer Science, Gwnagju Institute of Science and Technology, Gwangju, South Korea., Yu J; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea., Park S; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea., Park JH; Venture Business Laboratory, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya, 464-8603, Japan., Kim H; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea., Kim S; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea., Kim S; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea. sungkyu@sejong.ac.kr., Lee DS; School of Electrical Engineering and Computer Science, Gwnagju Institute of Science and Technology, Gwangju, South Korea. dslee66@gist.ac.kr., Kum HS; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea. hkum@yonsei.ac.kr.
Publikováno v:
Nano convergence [Nano Converg] 2023 Apr 28; Vol. 10 (1), pp. 19. Date of Electronic Publication: 2023 Apr 28.
Autor:
Kim KS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Lee D; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Chang CS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Seo S; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; School of Electronic and Electrical Engineering Sungkyunkwan University, Suwon-si, South Korea., Hu Y; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, USA., Cha S; Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, South Korea.; Department of Physics and Astronomy, University of California, Riverside, Riverside, CA, USA., Kim H; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Shin J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Lee JH; School of Electronic and Electrical Engineering Sungkyunkwan University, Suwon-si, South Korea., Lee S; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Kim JS; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA., Kim KH; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-si, South Korea., Suh JM; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Meng Y; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA., Park BI; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Lee JH; ISAC Research, Daejeon, South Korea., Park HS; ISAC Research, Daejeon, South Korea., Kum HS; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea., Jo MH; Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, South Korea.; Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea., Yeom GY; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-si, South Korea.; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon-si, South Korea., Cho K; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, USA., Park JH; School of Electronic and Electrical Engineering Sungkyunkwan University, Suwon-si, South Korea. jhpark9@skku.edu.; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon-si, South Korea. jhpark9@skku.edu., Bae SH; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA. sbae22@wustl.edu.; Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA. sbae22@wustl.edu., Kim J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.
Publikováno v:
Nature [Nature] 2023 Feb; Vol. 614 (7946), pp. 88-94. Date of Electronic Publication: 2023 Jan 18.
Autor:
Shin J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Kim H; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Sundaram S; CNRS, IRL 2958, GT-CNRS, Georgia Tech-Lorraine, Metz, France., Jeong J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, Republic of Korea., Park BI; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Chang CS; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Choi J; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, Republic of Korea., Kim T; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea., Saravanapavanantham M; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA., Lu K; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Kim S; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, Republic of Korea., Suh JM; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Kim KS; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Song MK; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Liu Y; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Qiao K; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Kim JH; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Kim Y; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, OH, USA., Kang JH; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Kim J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Lee D; Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA., Lee J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Kim JS; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, St. Louis, MO, USA., Lee HE; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Division of Advanced Materials Engineering, Jeonbuk National University, Jeonju, Republic of Korea., Yeon H; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, Republic of Korea., Kum HS; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea., Bae SH; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, St. Louis, MO, USA., Bulovic V; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA., Yu KJ; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea., Lee K; Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA. kyusang@virginia.edu., Chung K; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. khchung@mit.edu.; Institute for Medical Engineering and Science, Massachusetts Institute of Technology, Cambridge, MA, USA. khchung@mit.edu., Hong YJ; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, Republic of Korea. yjhong@sejong.ac.kr., Ougazzaden A; CNRS, IRL 2958, GT-CNRS, Georgia Tech-Lorraine, Metz, France. abdallah.ougazzaden@georgiatech-metz.fr.; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA. abdallah.ougazzaden@georgiatech-metz.fr., Kim J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.
Publikováno v:
Nature [Nature] 2023 Feb; Vol. 614 (7946), pp. 81-87. Date of Electronic Publication: 2023 Feb 01.
Autor:
Kim H; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Lee S; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Shin J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Zhu M; Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA., Akl M; Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, USA., Lu K; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Han NM; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Baek Y; Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA., Chang CS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Suh JM; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Kim KS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Park BI; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Zhang Y; Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA., Choi C; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA., Shin H; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea., Yu H; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Meng Y; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, St. Louis, MO, USA., Kim SI; Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Republic of Korea., Seo S; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Lee K; Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA., Kum HS; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea., Lee JH; Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Republic of Korea., Ahn JH; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea., Bae SH; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, St. Louis, MO, USA. sbae22@wustl.edu.; Institute of Materials Science and Engineering, Washington University in Saint Louis, St. Louis, MO, USA. sbae22@wustl.edu., Hwang J; Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA. hwang.458@osu.edu., Shi Y; Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA. shiy2@rpi.edu., Kim J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.
Publikováno v:
Nature nanotechnology [Nat Nanotechnol] 2022 Oct; Vol. 17 (10), pp. 1054-1059. Date of Electronic Publication: 2022 Sep 22.
Autor:
Kim Y; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, OH 45219, USA., Suh JM; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Shin J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Liu Y; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Yeon H; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea., Qiao K; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Kum HS; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea., Kim C; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Lee HE; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Division of Advanced Materials Engineering, Jeonbuk National University, Jeonju 54896, South Korea., Choi C; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Kim H; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Lee D; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Lee J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Kang JH; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Park BI; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Kang S; School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, South Korea., Kim J; School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, South Korea., Kim S; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, South Korea., Perozek JA; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Wang K; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; School of Micro-Nano Electronics, Zhejiang University, Hangzhou 311200 Zhejiang, People's Republic of China., Park Y; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Kishen K; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Kong L; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Palacios T; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA., Park J; School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, South Korea.; Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, South Korea., Park MC; Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, South Korea., Kim HJ; Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, South Korea.; Division of Nano and Information Technology, KIST School, Korea University of Science and Technology, Seoul 02792, South Korea., Lee YS; Department of Mechanical Engineering, Seoul National University, Seoul 08826, South Korea., Lee K; Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA., Bae SH; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Department of Mechanical Engineering and Materials Science, Institute of Materials Science and Engineering, Washington University in St. Louis, MO 63139, USA., Kong W; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Department of Materials Science and Engineering, Westlake University, Hangzhou 310024 Zhejiang, People's Republic of China., Han J; Skincare Division, Amorepacific R&D Center, Yongin 17074, South Korea., Kim J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Publikováno v:
Science (New York, N.Y.) [Science] 2022 Aug 19; Vol. 377 (6608), pp. 859-864. Date of Electronic Publication: 2022 Aug 18.
Autor:
Xing Z; Semiconductor Industry and Technology Research Institute, Jimei University, Xiamen, 361021, China., Akter A; Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, South Korea., Kum HS; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, South Korea., Baek Y; Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904, USA., Ra YH; Optic and Electronic Component Material Center, Korea Institute of Ceramic Engineering and Technology, Jinju, 52851, South Korea., Yoo G; School of Electronic Engineering, Soongsil University, Seoul, 06978, South Korea., Lee K; Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904, USA., Mi Z; Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA., Heo J; Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, South Korea. jsheo@ajou.ac.kr.
Publikováno v:
Scientific reports [Sci Rep] 2022 Mar 11; Vol. 12 (1), pp. 4301. Date of Electronic Publication: 2022 Mar 11.