Increasing the radiation resistance of single-crystal silicon epitaxial layers

Autor: Kurmashev Sh. D., Kulinich O. A., Brusenskaya G. I., Verem’eva A. V.

Publikováno v: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5-6, Pp 57-62 (2014)

The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109—1012 m–2. Such networks are created before th

Externí odkaz: https://doaj.org/article/b4925e9c224142b39f267e8439fb09e9

Influence of polycrystalline silicon layer on flow through «metal — p-Si» contact

Autor: Smyntyna V. A., Kulinich O. A., Yatsunskii I. R., Sviridova O. V., Marchuk I. A.

Publikováno v: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 39-41 (2011)

Based on the results of investigations of charge transport in the "metal — p-Si" contacts with different thickness of polycrystalline p-Si layer the mechanisms of charge transport through such structures are shown. It is established that with incre

Externí odkaz: https://doaj.org/article/075a7e3e028f44b096081ad2f9f4cf7f

The influence of initial defects on mechanical stress and deformation distribution in oxidized silicon

Autor: Kulinich O. A., Smyntyna V. A.,, Glauberman M. A., Chemeresyuk G. G., Yatsunskiy I. R.

Publikováno v: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 62-64 (2008)

The near-surface silicon layers in silicon – dioxide silicon systems with modern methods of research are investigated. It is shown that these layers have compound structure and their parameters depend on oxidation and initial silicon parameters. It

Externí odkaz: https://doaj.org/article/0354e8c540534ede9237787b0d30d1e7

ИССЛЕДОВАНИЕ ПРИЧИН КАТАСТРОФИЧЕСКОЙ ДЕГРАДАЦИИ ПАРАМЕТРОВ КРЕМНИЕВЫХ МОП- ТРАНЗИСТОРОВ

Autor: Kulinich, O., Glauberman, M., Chemeresuk, G., Yatsunsky, I.

Publikováno v: Sensor Electronics and Microsystem Technologies; Том 2, № 1 (2005); 85-89
Сенсорная электроника и микросистемные технологии; Том 2, № 1 (2005); 85-89
Сенсорна електроніка і мікросистемні технології; Том 2, № 1 (2005); 85-89

The paper is aimed at finding out the causes of the catastrophic degradation of parameters of silicon MOS-transistors, formed by the ordinary planar technology. The basic causes of degradation have been found to be:– thermal compression contacts ru

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=scientific_p::99b9cfb5bc3bf5fa608c3d1ea2cf244d
http://semst.onu.edu.ua/article/view/112262

Complex destruction of near-surface silicon layers of Si-SiO2 structure.

Autor: Yatsunskiy, I. R.¹ yatsunskiy@gmail.com, Kulinich, O. A.¹

Publikováno v: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010, Vol. 13 Issue 4, p418-421. 4p. 1 Illustration.