Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Kulbinder K, Banger"'
Publikováno v:
Polyhedron. 102:246-252
Three copper–indium bimetallic compounds, (PPh3)2CuIn(ER)4 [R = CH3, E = S and R = Ph, E = S and Se], potentially useful as single-source precursors for the lower temperature (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e8bf935f7c453acfa939f073d0a420e
https://doi.org/10.1016/j.poly.2015.09.038
https://doi.org/10.1016/j.poly.2015.09.038
Publikováno v:
Organic Electronics. 21:177-183
We have developed a novel solution-based integration scheme featuring organic and metal-oxide semiconductors with a polymeric gate dielectric. The integration relies on a facile subtractive patterning technique for the semiconductors, which, through
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90613d7712b85ea41f786fe40dcdf0bb
https://doi.org/10.1016/j.orgel.2015.03.004
https://doi.org/10.1016/j.orgel.2015.03.004
Autor:
Henning Sirringhaus, Pedro Barquinha, Rita Branquinho, Elvira Fortunato, Christopher Warwick, Josephine Socratous, Kulbinder K. Banger, Shun Watanabe, Rodrigo Martins
Publikováno v:
Physical Review B. 95
Despite the success of exploiting the properties of amorphous oxide semiconductors for device applications, the charge transport in these materials is still not clearly understood. The observation of a definite Hall voltage suggests that electron tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d64ae1953caf07bc098eeb574cb3b0a4
https://doi.org/10.1103/physrevb.95.045208
https://doi.org/10.1103/physrevb.95.045208
Autor:
Iyad Nasrallah, Marcia M. Payne, Yana Vaynzof, John E. Anthony, Jan Jongman, Henning Sirringhaus, Patrick Too, Kulbinder K. Banger
Publikováno v:
Chemistry of Materials. 26:3914-3919
We have investigated the degradation effects of ozone exposure on organic field-effect transistors based on 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene as the organic semiconducting channel layer, as well as on thin films of this wid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9c6abc26a71f313ee3a2c9c1d5789cb
https://doi.org/10.1021/cm501397y
https://doi.org/10.1021/cm501397y
Publikováno v:
Advanced Energy Materials. 3:1428-1436
Stability of organic photovoltaic devices (OPVs) is a limiting factor for their commercialization and still remains a major challenge whilst power conversion efficiencies are now approaching minimum requirements. The inverted organic solar cell (iOSC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b93c121c0b18802afd1cffeac4871896
https://doi.org/10.1002/aenm.201300308
https://doi.org/10.1002/aenm.201300308
Autor:
Kulbinder K. Banger
Publikováno v:
Encyclopedia of Inorganic and Bioinorganic Chemistry
An overview of the inorganic chemistry of gallium and its compounds is reported in detail with an attempt to bring up to date current studies in this field. In addition, the use of various Ga related alloys as either binary or ternary semiconducting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8dc420ff24c81804734546f952b3e29
https://doi.org/10.1002/9781119951438.eibc0072.pub2
https://doi.org/10.1002/9781119951438.eibc0072.pub2
Autor:
Peter K. H. Ho, Yana Vaynzof, Michael C. Gwinner, Kulbinder K. Banger, Henning Sirringhaus, Richard H. Friend
Publikováno v:
Advanced Functional Materials. 20:3457-3465
Electron injection from the source-drain electrodes limits the performance of many n-type organic field-effect transistors (OFETs), particularly those based on organic semiconductors with electron affinities less than 3.5 eV. Here, it is shown that m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc243bc0b19e71595bb6da4a109c1f71
https://doi.org/10.1002/adfm.201000785
https://doi.org/10.1002/adfm.201000785
Autor:
Yun Li, Henning Sirringhaus, Martin Nielsen, Klaus Müllen, Henrik T. Lemke, Hoi Nok Tsao, Zhihong Liu, R.C.G. Naber, Chuan Liu, Kulbinder K. Banger
Publikováno v:
Chemistry of Materials. 22:2120-2124
The thin film transistor characteristics of a soluble molecular semiconductor, terrylene tetracarboxdiimide (TDI), a homologue of perylene tetracarboxdiimide (PDI), have been investigated. In a bottom-gate device structure with benzocyclobutene gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcf88f0d6e155d2c3ae039239c2b7ad4
https://doi.org/10.1021/cm902925g
https://doi.org/10.1021/cm902925g
Autor:
Alan K. Brisdon, Christopher J. Herbert, Hana Ali Ghaba, Ian S. Tidmarsh, Kulbinder K. Banger
Publikováno v:
Journal of Fluorine Chemistry. 130:1117-1129
A review of the methods available for the preparation of monodentate P(III) compounds containing fluoroalkenyl, fluoroalkynyl and fluoroalkyl groups is given. The synthesis, properties and coordination chemistry of some fluoroalkenyl- and fluoroalkyn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e41079c77dbeb53787b41820f5b6c0c
https://doi.org/10.1016/j.jfluchem.2009.08.003
https://doi.org/10.1016/j.jfluchem.2009.08.003
Autor:
Josephine, Socratous, Kulbinder K, Banger, Yana, Vaynzof, Aditya, Sadhanala, Adam D, Brown, Alessandro, Sepe, Ullrich, Steiner, Henning, Sirringhaus
Publikováno v:
Advanced Functional Materials
The electronic structure of low temperature, solution-processed indium–zinc oxide thin-film transistors is complex and remains insufficiently understood. As commonly observed, high device performance with mobility >1 cm2 V−1 s−1 is achievable a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::944745fde3f5a5127193f18eb2bbbd20
https://pubmed.ncbi.nlm.nih.gov/26190964
https://pubmed.ncbi.nlm.nih.gov/26190964