Zobrazeno 1 - 10
of 310
pro vyhledávání: '"Kukreja L"'
Intermediate frequency range (511 - 514 cm-1) Si phonons in Si-SiO2 nanocomposites are shown to have contribution from both core1 and surface/interface1 Si phonons, where, ratio of contribution of the two depends on the size of a Si nanocrystal. Furt
Externí odkaz:
http://arxiv.org/abs/1408.0924
Autor:
Rani, Ekta, Ingale, Alka A., Chaturvedi, A., Kamal, C., Phase, D. M., Joshi, M. P., Chakrabarti, Aparna, Banerjee, Arup, Kukreja, L. M.
Si-SiO2 multilayer nanocomposite (NCp) films, grown using pulsed laser deposition with varying Si deposition time are investigated using Raman spectroscopy/mapping for studying the variation of Si phonon frequency observed in these NCps. The lower fr
Externí odkaz:
http://arxiv.org/abs/1407.6451
Epitaxy of ZnO layers on cubic GaP (111) substrates has been demonstrated using pulsed laser deposition. Out of plane and in-plane epitaxial relationship of ZnO layer with respect to GaP substrate determined using phi scans in high resolution X-ray d
Externí odkaz:
http://arxiv.org/abs/1406.4341
The influence of film morphology induced carrier diffusion on the broadening of the time-of-flight transient photo-current pulse was investigated using Monte Carlo simulation in organic thin films. Assuming the Gaussian Disorder Model for the charge
Externí odkaz:
http://arxiv.org/abs/1308.1769
Monte Carlo simulation was carried out to understand the influence of morphological inhomogeneity on carrier diffusion in organic thin films. The morphological inhomogeneity was considered in the simulation by incorporating the regions of low energet
Externí odkaz:
http://arxiv.org/abs/1308.1476
This paper addresses the effect of disorder on the carrier transport mechanism of atomic layer deposited ZnO thin films as has been investigated by temperature dependent electrical resistivity measurements in the temperature range of 4.2K to 300K. Fi
Externí odkaz:
http://arxiv.org/abs/1301.1172
Autor:
Das, Amit K., Misra, P., Ajimsha, R. S., Bose, A., Joshi, S. C., Phase, D. M., Kukreja, L. M.
For a detailed study on the semiconductor to metal transition (SMT) in ZnO thin films doped with Al in the concentration range from 0.02 to 2%, we grew these films on (0001) sapphire substrates using sequential pulsed laser deposition. It was found t
Externí odkaz:
http://arxiv.org/abs/1202.3298
Publikováno v:
Journal of Applied Physics; 8/28/2016, Vol. 120 Issue 8, p085704-1-085704-9, 9p, 1 Diagram, 1 Chart, 6 Graphs
Autor:
Verma, Shweta, Rao, B. T., Detty, A. P., Ganesan, V., Phase, D. M., Rai, S. K., Bose, A., Joshi, S. C., Kukreja, L. M.
Publikováno v:
Journal of Applied Physics; 2015, Vol. 117 Issue 13, p133105-1-133105-11, 11p, 1 Chart, 13 Graphs
Publikováno v:
Journal of Applied Physics; 2014, Vol. 115 Issue 19, p193705-1-193705-4, 4p, 5 Graphs