Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Kuijun Li"'
Publikováno v:
Reaction Chemistry & Engineering. 2:550-560
Inaccuracy in chemical kinetic models is a problem that affects the reliability of large-scale process models. Detailed and accurate kinetic models could improve this situation, but such models are often too computationally intensive to utilize at pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5310edc97d06c904061b27767343836a
https://doi.org/10.1039/c7re00040e
https://doi.org/10.1039/c7re00040e
Publikováno v:
The Journal of Physical Chemistry C. 120:23683-23691
The anomalous behavior of CO2 adsorption in anhydrous and humid conditions in silica-supported, polyethylenimine (PEI)-impregnated sorbents has been elucidated in a new chemical model. New quantum chemical calculations show that the zwitterion, whose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a876eb954ce791aae02d93c4f0ba715a
https://doi.org/10.1021/acs.jpcc.6b08808
https://doi.org/10.1021/acs.jpcc.6b08808
Autor:
McMahan L. Gray, David S. Mebane, Curtis B. Storlie, Joel D. Kress, Daniel J. Fauth, Kuijun Li
Publikováno v:
The Journal of Physical Chemistry C. 117:26617-26627
The uptake of CO2 in highly loaded, silica-supported, polyethylenimine (PEI)-impregnated sorbents was investigated in a reaction-diffusion model of the CO2 adsorption process. The model successfully replicated the pseudoequilibrium behavior experimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b16f56c59f133293498b780990c8d31
https://doi.org/10.1021/jp4076417
https://doi.org/10.1021/jp4076417
Publikováno v:
Semiconductor Science and Technology. 28:015001
Different diffusion sources were used to study Zn diffusion in n-GaSb. We found that the Ga atoms from the diffusion sources suppressed the formation of the high-concentration surface diffusion fronts in Zn profiles, thus converting the kink-and-tail
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a66b15446c4e2bd187e92e3d23bf942
https://doi.org/10.1088/0268-1242/28/1/015001
https://doi.org/10.1088/0268-1242/28/1/015001
Publikováno v:
Semiconductor Science & Technology; Jan2013, Vol. 28 Issue 1, p1-6, 6p