Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Kui Dang"'
Autor:
Jincheng Zhang, Pengfei Dong, Kui Dang, Yanni Zhang, Qinglong Yan, Hu Xiang, Jie Su, Zhihong Liu, Mengwei Si, Jiacheng Gao, Moufu Kong, Hong Zhou, Yue Hao
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
The simultaneous achievement of high breakdown voltage and low resistance is a contradictory point because it would require high and low doping simultaneously. Here, Zhou et al. achieve a power figure-of-merit of 13.2 GW/cm2 through hole injection an
Externí odkaz:
https://doaj.org/article/089b9b361d4048fcadc3fa7093964b18
Autor:
Zhuangzhuang Hu, Hong Zhou, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Qian Feng, Jincheng Zhang, Yue Hao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 815-820 (2018)
In this paper, we report on achieving the first high performance lateral $\beta $ -Ga2O3 Schottky barrier diode (SBD) on sapphire substrate via transferring $\beta $ -Ga2O3 nano-membrane channel from a low dislocation density bulk $\beta $ -Ga2O3 sub
Externí odkaz:
https://doaj.org/article/c3652f9b187748fcbc13a296267a3305
Autor:
Kui Dang, Huining Liu, Chaoqun Zhang, Shudong Huo, Peng Zhan, Zhilin Qiu, Yachao Zhang, Hong Zhou, Jing Ning, Jincheng Zhang, Yue Hao
Publikováno v:
IEEE Microwave and Wireless Technology Letters. 33:591-594
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba16171deacdf6225c19e6a21f0aed98
https://doi.org/10.1109/lmwt.2022.3232151
https://doi.org/10.1109/lmwt.2022.3232151
Autor:
Chenlu Wang, Qinglong Yan, Chunxu Su, Sami Alghamdi, Emad Ghandourah, Zhihong Liu, Xin Feng, Weihang Zhang, Kui Dang, Yingmin Wang, Jian Wang, Jincheng Zhang, Hong Zhou, Yue Hao
Publikováno v:
IEEE Electron Device Letters. 44:380-383
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd23801733a63c47dc162013071a684c
https://doi.org/10.1109/led.2023.3237598
https://doi.org/10.1109/led.2023.3237598
Autor:
Weina Lei, Kui Dang, Hong Zhou, Jincheng Zhang, Chenlu Wang, Qian Xin, Sami Alghamdi, Zhihong Liu, Qian Feng, Rujun Sun, Chunfu Zhang, Yue Hao
Publikováno v:
IEEE Transactions on Electron Devices. 69:3617-3622
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a54419b71118e3bfc3046b051bd4c89b
https://doi.org/10.1109/ted.2022.3172919
https://doi.org/10.1109/ted.2022.3172919
Autor:
Kui Dang, Peng Zhan, Jincheng Zhang, Hong Zhou, Shudong Huo, Yanni Zhang, Yachao Zhang, Jing Ning, Shengrui Xu, Yue Hao
Publikováno v:
IEEE Electron Device Letters. 43:537-540
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acfd7eed54f12e9915e23a582a062d83
https://doi.org/10.1109/led.2022.3154589
https://doi.org/10.1109/led.2022.3154589
Autor:
Hanghai Du, Jincheng Zhang, Hong Zhou, Zhihong Liu, Tao Zhang, Kui Dang, Yanni Zhang, Weihang Zhang, Yachao Zhang, Yue Hao
Publikováno v:
IEEE Transactions on Electron Devices. 69:968-972
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e33223af2bd109499887292d0e0edaca
https://doi.org/10.1109/ted.2021.3138954
https://doi.org/10.1109/ted.2021.3138954
Autor:
Yachao Zhang, Yaolong Dong, Kai Chen, Kui Dang, Yixin Yao, Baiqi Wang, Jinbang Ma, Wenjun Liu, Xing Wang, Jincheng Zhang, Yue Hao
Publikováno v:
Applied Physics Letters. 122:142105
In this work, high-performance high-electron-mobility transistors (HEMTs) with a thin GaN channel and an AlN back barrier were fabricated and investigated in detail. The AlN back barrier HEMTs possess a higher current density and a better linearity t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ca95ae7ffeda1e739ca9ee8b91e651a
https://doi.org/10.1063/5.0134633
https://doi.org/10.1063/5.0134633
Autor:
Kui Dang, Yanni Zhang, Jincheng Zhang, Hong Zhou, Pengfei Dong, Jiabo Chen, Zhuangzhuang Hu, Yue Hao, Qinglong Yan, Zhaoqing Feng
Publikováno v:
IEEE Transactions on Electron Devices. 67:3948-3953
Both dc and OFF-state stress characteristics of vertical beta-gallium oxide $(\beta $ -Ga2O3) Schottky barrier diodes (SBDs) with or without ion-implanted edge termination (ET) were comparatively analyzed in this work. An implanted ET by He and Mg io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54a0bcdc03104d0c839c727b0bdd80ef
https://doi.org/10.1109/ted.2020.3002327
https://doi.org/10.1109/ted.2020.3002327
Autor:
Yachao Zhang, Yue Hao, Zhaoke Bian, Kui Dang, Xiaoling Duan, Jincheng Zhang, Hong Zhou, Shan Yin, Tao Zhang, Jiabo Chen, Jing Ning, Shenglei Zhao
Publikováno v:
IEEE Transactions on Industrial Electronics. 67:6597-6606
In this article, we have carried out a comprehensive study on the wireless power transfer (WPT) concept from the rectifier circuit construction and state-of-art GaN Schottky barrier diode (SBD) device technology to the WPT system demonstration. Benef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7a2620504c40ad04c01844a50dd7acc
https://doi.org/10.1109/tie.2019.2939968
https://doi.org/10.1109/tie.2019.2939968