Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Kuhn, Kelin"'
Density functional theory paired with a first order many-body perturbation theory correction is applied to determine formation energies and charge transition energies for point defects in bulk In_0.53Ga_0.47As and for models of the In_0.53Ga_0.47As/A
Externí odkaz:
http://arxiv.org/abs/1609.07624
Autor:
Ansari, Lida, Feldman, Baruch, Fagas, Giorgos, Lacambra, Carlos Martinez, Haverty, Michael G., Kuhn, Kelin J., Shankar, Sadasivan, Greer, James C.
Publikováno v:
IEEE Trans. Nanotechnol., 12, 1075, Nov. 2013
Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain junction and thus can be easier to implement in aggressive geometries
Externí odkaz:
http://arxiv.org/abs/1303.3755
Autor:
Kuhn, Kelin J.
Publikováno v:
In Microelectronic Engineering 2011 88(7):1044-1049
Publikováno v:
Journal of Applied Physics; 2017, Vol. 121 Issue 7, p1-14, 14p, 3 Diagrams, 1 Chart, 7 Graphs
Autor:
Kuhn, Kelin
Publikováno v:
In High Mobility Materials for CMOS Applications 2018:1-44
Autor:
Kuhn, Kelin1, Kenyon, Chris1, Kornfeld, Avner1, Liu, Mark1, Maheshwari, Atul1, Wei-kai Shih1, Sivakumar, Sam1, Taylor, Greg1, VanDerVoorn, Peter1, Zawadzki, Keith1
Publikováno v:
Intel Technology Journal. May2008, Vol. 12 Issue 2, p93-109. 17p. 5 Color Photographs, 2 Black and White Photographs, 4 Diagrams, 14 Graphs.
Autor:
Kuhn, Kelin J., Ahmed, Shahriar, Vandervoorn, Peter, Murthy, Anand, Obradovic, Borna, Raol, Kartik, Wai-kai Shih, Iwen Chao, Post, Ian, Chambers, Steve
Publikováno v:
Intel Technology Journal. 5/16/2002, Vol. 6 Issue 2, p31. 11p.
Publikováno v:
In Solid State Electronics February 2015 104:44-46
Publikováno v:
Journal of Applied Physics; 3/1/1991, Vol. 69 Issue 5, p3135, 7p, 1 Chart, 9 Graphs