Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Kuei-Hung Shen"'
Autor:
Yu-Der Chih, Chung-Cheng Chou, Yi-Chun Shih, Chia-Fu Lee, Win-San Khwa, Chun-Yu Wu, Kuei-Hung Shen, Wen-Ting Chu, Meng-Fan Chang, Harry Chuang, Tsung-Yung Jonathan Chang
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f4db78e784b4732bff64cc52ffe7309
https://doi.org/10.1109/iedm19574.2021.9720557
https://doi.org/10.1109/iedm19574.2021.9720557
Autor:
Harry Chuang, Po-Hao Lee, Hon-Jarn Lin, Kuei-Hung Shen, Yu-Lin Chen, Tsung-Yung Jonathan Chang, Meng-Chun Shih, Chieh-Pu Lo, Lee Chia-Fu, Chang Yen-An, Yu-Der Chih, Yi-Chun Shih
Publikováno v:
ISSCC
STT-MRAM is a promising solution for next-generation embedded non-volatile memory (NVM), supporting a wide range of applications. Compared to traditional embedded Flash [1]–[2], STT-MRAM is a CMOS-compatible low-temperature back-end-of-the-line (BE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63a98d99f11dfa2a029775badc6f7092
https://doi.org/10.1109/isscc19947.2020.9062955
https://doi.org/10.1109/isscc19947.2020.9062955
Autor:
Jian-Cheng Huang, William J. Gallagher, Christine Bair, Eric Chien, J. J. Wu, C.Y. Wang, Lee Chia-Fu, Meng-Chun Shih, Wayne Wang, Kuei-Hung Shen, Roger Wang, Chiang Tien-Wei, Yi-Chun Shih, George Lee, Harry Chuang
Publikováno v:
VLSI Circuits
MRAM can play a variety of on-chip memory roles in advanced VLSI technology spanning from high retention, solder-reflow-capable non-volatile memory (NVM) to dense non-volatile or high retention working RAMs. This paper describes results for a solder-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::939cbd8ea519fc261c477cff97b441c3
https://doi.org/10.23919/vlsit.2019.8776547
https://doi.org/10.23919/vlsit.2019.8776547
Autor:
Luc Thomas, Allen Wang, Yung-Huei Lee, Derek Lin, Po-Kang Wang, Guenole Jan, Harry Chuang, Chang Chih-Yang, Chen Chia-Hsiang, William J. Gallagher, Wayne Wang, Tom Zhong, Jian Zhu, Chih-Hui Weng, Yuan-Jen Lee, Chiang Tien-Wei, Chia-Yu Wang, Kuei-Hung Shen, Huanlong Liu, Meng-Chun Shih
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
External magnetic field resistance under write, read operations for perpendicular STT-MRAM qualified for 260°C solder reflow is comprehensively reported for the first time. We show that the most critical polarization direction is writing from parall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd9c46601e11efb6958d0b3ed2d3d16
https://doi.org/10.1109/iedm.2017.8268432
https://doi.org/10.1109/iedm.2017.8268432
Autor:
Chrong Jung Lin, Ching-Hua Wang, Kuei-Hung Shen, Yung-Hung Wang, Ya-Chin King, Kun-Yu Dai, Ming-Jinn Tsai
Publikováno v:
IEEE Transactions on Electron Devices. 61:2480-2485
A new wireless 3-D integrated circuit connection method, magnetic-sensing transmission interface (MTI), is reported for the first time. Signal transmission through the MTI implemented by placing a high-sensitivity sensor with perpendicular magnetic a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7790364e7007df862055da4bd9cf05aa
https://doi.org/10.1109/ted.2014.2324591
https://doi.org/10.1109/ted.2014.2324591
Publikováno v:
Electronics Letters. 51:2064-2066
A magnetic transmission interface module composed of a high-sensitivity sensor stacked on top of a micro-coil is proposed as a contactless connection method for the three-dimensional integrated circuit. The magnetic sensor responds to the localised m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea7f326bd9ada7a16ac2eb22800d6830
https://doi.org/10.1049/el.2015.2275
https://doi.org/10.1049/el.2015.2275
Autor:
Luc Thomas, Harry Chuang, Yuan-Jen Lee, Tom Zhong, Derek Lin, Po-Kang Wang, Yung-Huei Lee, Kuei-Hung Shen, Huanlong Liu, Terry Torng, Yu-Jen Wang, Jian Zhu, Chiang Tien-Wei, Meng-Chun Shih, Chia-Yu Wang, William J. Gallagher, Guenole Jan, Wayne Wang
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
A comprehensive reliability analysis of perpendicular Spin-Transfer-Torque Magnetic Random Access Memory (pSTT-MRAM) is demonstrated that pSTT-MRAM is capable of fast write, more than 107 cycles endurance, less than 10−20 read disturb error rate at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4644b1ae211f5fa1063aa733905d2315
https://doi.org/10.1109/vlsit.2016.7573411
https://doi.org/10.1109/vlsit.2016.7573411
Autor:
Shan Yi Yang, Shu Jui Chang, Horng Ji Lin, Chao Yao Yang, Yuan-Chieh Tseng, Min Han Lee, Kuei Hung Shen
Publikováno v:
Scientific Reports
We intensively investigate the physical principles regulating the tunneling magneto-resistance (TMR) and perpendicular magnetic anisotropy (PMA) of the CoFeB/MgO magnetic tunnel junction (MTJ) by means of angle-resolved x-ray magnetic spectroscopy. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::842be484dccddd198eaeae22784d1051
https://pubmed.ncbi.nlm.nih.gov/26596778
https://pubmed.ncbi.nlm.nih.gov/26596778
Publikováno v:
2015 International Symposium on VLSI Technology, Systems and Applications.
Multi-channel magnetic transmission interface consists of a MTJ array and intertwined micro-coils for near field data transmission is first-time proposed and demonstrated. This approach provides a possible new direction for high density contactless c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::551bd81258f1d5e3bfb20555ac9cc303
https://doi.org/10.1109/vlsi-tsa.2015.7117586
https://doi.org/10.1109/vlsi-tsa.2015.7117586
Autor:
Sheng-Huang Huang, Ding-Yeong Wang, Jia-Hong Shyu, Cheng-Wei Chien, Keng-Ming Kuo, Tzu-Kun Ku, Kuei-Hung Shen, Shan-Yi Yang, Duan-Li Deng
Publikováno v:
2015 International Symposium on VLSI Technology, Systems and Applications.
This study shows a clear correlation between back hopping, write error rate, bias-dependent coercivity (Hc) and the switching phase diagram (SPD) of p-MTJs. Data support that the bias-induced fieldlike torque, in addition to the Slonczewski anti-damp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ea925863841cfc8cbd0c210ce58b218
https://doi.org/10.1109/vlsi-tsa.2015.7117565
https://doi.org/10.1109/vlsi-tsa.2015.7117565