Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Kuei-Chun Hung"'
Publikováno v:
Journal of Pharmacological Sciences, Vol 93, Iss 3, Pp 299-306 (2003)
ABSTRACT: The involvement of spinopetal noradrenergic and serotonergic systems in antinociception induced by endomorphin-1 (EM-1) and endomorphin-2 (EM-2) given supraspinally or spinally were investigated in male CD-1 mice. Groups of mice were pretre
Externí odkaz:
https://doaj.org/article/ebbb461229874ec6899bd43cf9dcd719
Autor:
Andrew D. Clithero, Hsiang-en Wu, Emma T. Schwasinger, Kuei-chun Hung, Randy J. Leitermann, Maia Terashvili, Leon F. Tseng
Publikováno v:
Journal of Pharmacology and Experimental Therapeutics. 309:816-824
An unbiased conditioned place preference (CPP) paradigm was used to evaluate the reward effects of endogenous mu-opioid receptor ligands endomorphin-1 (EM-1) and endomorphin-2 (EM-2) from the mesolimbic posterior nucleus accumbens (Acb) shell and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7b419aa1fa842b3990a7c772990487d
https://doi.org/10.1124/jpet.103.059287
https://doi.org/10.1124/jpet.103.059287
Autor:
Leon F. Tseng, Tsutomu Suzuki, Kuei-chun Hung, Hiroshi Nagase, Minoru Narita, Hirokazu Mizoguchi, Randy J. Leitermann
Publikováno v:
European Journal of Pharmacology. 461:35-39
The effects of kappa-opioid receptor agonists trans-3,4-dichloro-N-(2-(1-pyrollidinyl)-cyclohexyl) benzeneacetamide ((-)-U50,488H) and 17-cyclopropylmethyl-3,14beta-dihydroxy-4,5alpha-epoxy-6beta-[N-methyl-trans-3-(3-furyl)acrylamido]morphinan hydroc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06afc0c75168d38f086a1c18699533b1
https://doi.org/10.1016/s0014-2999(03)01299-8
https://doi.org/10.1016/s0014-2999(03)01299-8
Autor:
James M. Fujimoto, Hsiang-en Wu, Kuei-chun Hung, Leon F. Tseng, Randy J. Leitermann, Maia Terashvili, Hirokazu Mizoguchi
Publikováno v:
Journal of Pharmacology and Experimental Therapeutics. 303:867-873
Intrathecal (i.t.) pretreatments with antisense oligodeoxynucleotides (AS ODNs) against exon-1, -4, or -8 of mu-opioid receptor clone (MOR-1) to knockdown different variants of MOR-1 on the antinociception induced by endomorphin-1, enomorphin-2, or [
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b09c46ad5e02e82c3d4aebce4c69910
https://doi.org/10.1124/jpet.102.038810
https://doi.org/10.1124/jpet.102.038810
Publikováno v:
SPIE Proceedings.
Tight control of critical dimensions (CDs) of integrated circuit (IC) is required to achieve desired circuit performances, and getting more and more important as the IC CD shrinks. Phenomena and solutions of inter-field and intra-field CD errors have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0cfc3ea2a244e9cd53b7ac93f535f3
https://doi.org/10.1117/12.599321
https://doi.org/10.1117/12.599321
Autor:
Shu Ping Fang, Paul Chiang, Hsiang Yang, Benjamin Sue-Min Lin, Kuei-Chun Hung, Hsien-an Chang
Publikováno v:
Optical Microlithography XVIII.
Optical resolution limit is one of the concerns for exposure tool selection. ArF lithography tools are the first choice for critical layers of 90 nm node with pitches narrower than 280 nm. However, high cost of ArF tools and photoresists make IC manu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98b694fdc86f917eeed323b1f661247b
https://doi.org/10.1117/12.598707
https://doi.org/10.1117/12.598707
Publikováno v:
SPIE Proceedings.
As 6% attenuated phase shift masks (PSM) become commonly used in ArF advanced lithography for the 90nm Technology and mass production to print lines/ spaces as well as contacts, the specification and control of the phase angle and the width of the di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76580721e1be37fcc308218073e359dc
https://doi.org/10.1117/12.535167
https://doi.org/10.1117/12.535167
Autor:
Benjamin Szu-Min Lin, Klaus Herold, Wilhelm Maurer, Jochen Schacht, Yuri Granik, J. Andres Torres, Ching-Hsu Chang, Rainer Zimmermann, G. Kuei-Chun Hung
Publikováno v:
SPIE Proceedings.
Ability to predict process behavior under defocus has until now relied on explicit calculations, which while accurate, cannot be realistically used in full-chip optical and process correction strategies due to the long run times. In this work, we hav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e1b97440ffd00aa1956f942842393c3
https://doi.org/10.1117/12.534123
https://doi.org/10.1117/12.534123
Publikováno v:
SPIE Proceedings.
Due to the existing problems and delay of 157nm lithography tool, extension of the ArF (193nm) lithography process with resolution enhancement techniques (RET) should be considered for the 65nm generation lithography and beyond. The mature double-exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23d572dd454f654d990939f5d3729a47
https://doi.org/10.1117/12.534641
https://doi.org/10.1117/12.534641
Publikováno v:
SPIE Proceedings.
There are many works on extension of KrF lithography for 90 nm logic generation, especially for those back end of line (BEOL) layers. High cost and immaturity of ArF tools and photoresists are the major factors that make IC manufacturers try to seek
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aff7e94a7604ce4688b9639049506662
https://doi.org/10.1117/12.535046
https://doi.org/10.1117/12.535046