Zobrazeno 1 - 10
of 118
pro vyhledávání: '"Kudrynskyi, Zakhar R."'
Autor:
Venanzi, Tommaso, Selig, Malte, Pashkin, Alexej, Winnerl, Stephan, Katzer, Manuel, Arora, Himani, Erbe, Artur, Patanè, Amalia, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Baldassarre, Leonetta, Knorr, Andreas, Helm, Manfred, Schneider, Harald
A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe us
Externí odkaz:
http://arxiv.org/abs/2202.09156
Autor:
Wadge, Matthew D., Agyakwa, Pearl A., Felfel, Reda M., Homer, Richard, Cooper, Timothy P., Kudrynskyi, Zakhar R., Lester, Edward, Ahmed, Ifty, Grant, David M.
Publikováno v:
In Materials & Design April 2024 240
Autor:
Lv, Quanshan, Yan, Faguang, Mori, Nobuya, Zhu, Wenkai, Hu, Ce, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Patanè, Amalia, Wang, Kaiyou
Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of de
Externí odkaz:
http://arxiv.org/abs/2001.10273
Autor:
Ubrig, Nicolas, Ponomarev, Evgeniy, Zultak, Johanna, Domaretskiy, Daniil, Zólyomi, Viktor, Terry, Daniel, Howarth, James, Gutiérrez-Lezama, Ignacio, Zhukov, Alexander, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Patanè, Amalia, Taniguchi, Takashi, Watanabe, Kenji, Gorbachev, Roman V., Fal'ko, Vladimir I., Morpurgo, Alberto F.
Publikováno v:
Nature Materials (2020)
Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stem
Externí odkaz:
http://arxiv.org/abs/1912.10345
Autor:
Wadge, Matthew D., Lowther, Morgan, Cooper, Timothy P., Reynolds, William J., Speidel, Alistair, Carter, Luke N., Rabbitt, Daisy, Kudrynskyi, Zakhar R., Felfel, Reda M., Ahmed, Ifty, Clare, Adam T., Grant, David M., Grover, Liam M., Cox, Sophie C.
Publikováno v:
In Journal of Materials Processing Tech. August 2023 317
Autor:
Lee, Yongjin, Pisoni, Riccardo, Overweg, Hiske, Eich, Marius, Rickhaus, Peter, Patanè, Amalia, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar. D., Gorbachev, Roman, Watanabe, Kenji, Taniguchi, Takashi, Ihn, Thomas, Ensslin, Klaus
Publikováno v:
2D Mater. 5 035040,2018
In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the c
Externí odkaz:
http://arxiv.org/abs/1805.10946
Autor:
Hamer, Matthew, Tóvári, Endre, Zhu, Mengjian, Thompson, Michael D., Mayorov, Alexander, Prance, Jonathon, Lee, Yongjin, Haley, Richard P., Kudrynskyi, Zakhar R., Patanè, Amalia, Terry, Daniel, Kovalyuk, Zakhar D., Ensslin, Klaus, Kretinin, Andrey V., Geim, Andre, Gorbachev, Roman
Publikováno v:
Nano Lett., 2018, 18 (6), p 3950
Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here w
Externí odkaz:
http://arxiv.org/abs/1805.05896
Autor:
Wadge, Matthew D., Carrington, Matthew J., Constantin, Hannah, Orange, Kieran, Greaves, Jason, Islam, Md Towhidul, Zakir Hossain, Kazi M., Cooper, Timothy P., Kudrynskyi, Zakhar R., Felfel, Reda M., Ahmed, Ifty, Grant, David M.
Publikováno v:
In Materials Characterization March 2022 185
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