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pro vyhledávání: '"Kuanglei Chen"'
An Ultrahigh‐Rectification‐Ratio WSe2 Homojunction Defined by High‐Efficiency Charge Trapping Effect
Autor:
Lihua Wang, Xiaoyu He, Xiankun Zhang, Xiaofu Wei, Kuanglei Chen, Li Gao, Huihui Yu, Mengyu Hong, Zheng Zhang, Yue Zhang
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 2, Pp n/a-n/a (2024)
Abstract Although 2D material van der Waals heterostructures (vdWHs) exhibit many novel properties and applications, 2D homojunctions have unique advantages in interface lattice matching, band continuity, and charge transfer efficiency. However, the
Externí odkaz:
https://doaj.org/article/b222e0c5df2a4584b0c876ac792ba76f
Autor:
Qingliang Liao, Jiankun Xiao, Zhuo Kang, Huihui Yu, Kuanglei Chen, Zheng Zhang, Baishan Liu, Xiankun Zhang, Yue Zhang, Junli Du
Publikováno v:
Nano Research. 15:475-481
Monolayer two-dimensional (2D) semiconductors are emerging as top candidates for the channels of the future chip industry due to their atomically thin body and superior immunity to short channel effect. However, the low saturation current caused by t