Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Kuang-Yeh Chang"'
Autor:
Chenming Hu, W. Boardman, M. Biegel, Kuang-Yeh Chang Kuang-Yeh Chang, S.R. Nariani, S. Kaylor
Publikováno v:
Proceedings of the IEEE Custom Integrated Circuits Conference.
FLOTOX EEPROM is integrated into a 1.Opm CMOS ASIC environment, with minimum disturbance of the library devices. High field isolation, high junction breakdown and a manufacturable tunnel oxide module are made independent of the ASIC process and its f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4025ba0e57035dbd51062dd8de24e023
https://doi.org/10.1109/cicc.1992.591173
https://doi.org/10.1109/cicc.1992.591173
Autor:
R. Wong, Kuang-Yeh Chang, David P. Chan, William J. Boardman, Calvin T. Gabriel, Vivek Jain, Subhash R. Nariani, K. Gordon
Publikováno v:
[1992] Proceedings. Fifth Annual IEEE International ASIC Conference and Exhibit.
Amorphous silicon has been used as a programmable material for a metal-to-metal anti-fuse. A study on the characteristics of such an anti-fuse and the parameters that affect its programming characteristics is presented. In the unprogrammed state the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ded6f96a2bc2f5cbfa758abab7b328b
https://doi.org/10.1109/asic.1992.270296
https://doi.org/10.1109/asic.1992.270296
Publikováno v:
1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference.
A triple metal process for high performance, high reliability application specific CMOS circuits is described. Key features of this process are identical pitches for all three levels of metal, layered metal for high electromigration resistance of int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e98ec909d785c2f4fca490fa549758c1
https://doi.org/10.1109/vmic.1991.152962
https://doi.org/10.1109/vmic.1991.152962
Publikováno v:
1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference.
The impact of the PECVD IMO film on hot carrier reliability of sub-micron MOS devices has been studied. It has been shown, for the first time, that modifying the PECVD IMO film can result in more than an order of magnitude improvement in the hot carr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::746f25e378dcd675f7bb8c4f7ee9722e
https://doi.org/10.1109/vmic.1991.152999
https://doi.org/10.1109/vmic.1991.152999
Publikováno v:
1991 Symposium on VLSI Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1612a4659cf4a2b81d188e50a6d2403
https://doi.org/10.1109/vlsit.1991.706005
https://doi.org/10.1109/vlsit.1991.706005
Autor:
A.G. Sabnis, Kuang-Yeh Chang
Publikováno v:
Electronics Letters. 13:113
The conductivity of d.c.-sputtered Sb-doped tin-dioxide films improves with higher substrate substrate temperatures. The conductivity is stable and is not influenced by the substrate material. Heating in open air does not deteriorate the film conduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e45b2e7054cdcfac41bb57e2bb6d727
https://doi.org/10.1049/el:19770079
https://doi.org/10.1049/el:19770079
Publikováno v:
1992 Proceedings of the IEEE Custom Integrated Circuits Conference; 1/ 1/1992, p9-9, 1p