Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Kuang-Yau Teng"'
Autor:
Kuang-Yau Teng, Huang-Chin Chen, Chen-Yau Tang, Balakrishnan Sundaravel, Sankarakumar Amirthapandian, I-Nan Lin
Publikováno v:
AIP Advances, Vol 1, Iss 4, Pp 042108-042108-22 (2011)
The effect of 2.245 GeV Au-ion irradiation and post-annealing processes on the microstructure and electron field emission (EFE) properties of diamond films was investigated. For the microcrystalline diamond (MCD) films, Au-ion irradiation with a flue
Externí odkaz:
https://doaj.org/article/edff2e594e0145afb2a7e2c4bfab2a34
Autor:
Kuang-Yau Teng, 鄧光佑
100
In this thesis, we used 3 examples to demonstrate the effect of graphitization process on enhancing the electron field emission (EFE) properties of diamond films, viz. (i) high energy ion irradiation, (ii) ultrasonication-bias enhanced growt
In this thesis, we used 3 examples to demonstrate the effect of graphitization process on enhancing the electron field emission (EFE) properties of diamond films, viz. (i) high energy ion irradiation, (ii) ultrasonication-bias enhanced growt
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/46788371424000629124
Autor:
Huang-Chin Chen, Kuang-Yau Teng, Chen-Yau Tang, Sundaravel, Balakrishnan, Amirthapandian, Sankarakumar, I-Nan Lin
Publikováno v:
Journal of Applied Physics; Dec2010, Vol. 108 Issue 12, p123712, 7p, 2 Color Photographs, 4 Black and White Photographs, 1 Diagram, 1 Chart, 3 Graphs
Publikováno v:
Surface and Coatings Technology. 228:S175-S178
The evolution of the characteristics of diamond films in bias-enhanced-nucleation and bias-enhanced-growth (BEN–BEG) processes was systematically investigated. While the BEN process efficiently formed diamond nuclei on the Si-substrates, BEG with l
Autor:
Kamatchi Jothiramalingam Sankaran, C.C. Horng, N.H. Tai, I-Nan Lin, Chi-Young Lee, Hsiu Fung Cheng, Huang-Chin Chen, Kuang-Yau Teng, H.Y. Chiang
Publikováno v:
Diamond and Related Materials. 24:126-133
Here, we demonstrated with examples that the presence of nano-graphite phase markedly enhanced the electron field emission (EFE) properties of the ultrananocrystaline diamond films. The nano-graphite phase was induced by different mechanism. In the t
Publikováno v:
Diamond and Related Materials. 24:188-194
The electron field emission (EFE) process for ultrananocrystalline diamond (UNCD) films was tremendously enhanced by Fe-coating and post-annealing processes. The extent of enhancement changes with the granular structure of the UNCD films and the post
Publikováno v:
25th International Vacuum Nanoelectronics Conference.
The enhancement on the plasma illumination characteristics of a capacity-type plasma devices (CP-devices) utilizing the diamond coated Si-nanotips as cathodes was systematically investigated. The improvement on these characteristics was closely corre
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31:02B109
The enhancement of the plasma illumination characteristics of capacitive-type plasma devices (CP-devices) utilizing diamond-coated Si-nanotips as cathodes was systematically investigated. The enhanced electron field emission (EFE) properties of the d
Publikováno v:
Journal of Applied Physics. 112:033708
The interaction between Fe-coatings and ultrananocrystalline diamond (UNCD) films during annealing was investigated in detail using transmission electron microscopy. The thin Fe-coating first formed nanosized Fe-clusters and then catalytically dissoc
Publikováno v:
Journal of Applied Physics. 111:053701
The evolution of diamond films in bias-enhanced-nucleation (BEN) and bias-enhanced-growth (BEG) processes was systematically investigated. While the BEN process can efficiently form diamond nuclei on the Si substrates, BEG with large enough applied f