Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kuang-Tse Ho"'
Autor:
Kuang-Tse Ho, Cheng-Che Li
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper discusses the steps involved in the failure analysis of power semiconductor devices in which leakage currents are observed and can be traced to doping-profile variations in ion-implanted layers. The discovery and assessment of such defects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee250f24954ce8a3e37b44e677f6b5f6
https://doi.org/10.31399/asm.cp.istfa2021p0301
https://doi.org/10.31399/asm.cp.istfa2021p0301
Autor:
Kuang-Tse Ho, Cheng-Che Li
Publikováno v:
International Symposium for Testing and Failure Analysis.
Vertical-cavity surface-emitting lasers (VCSELs) have many advantages over edge-emitting devices, but they tend to be more sensitive to increasing current density both in lifetime and reliability. To better understand this relationship, the authors i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d6e73b303f0e158fc4f34bf236c982d
https://doi.org/10.31399/asm.cp.istfa2021p0296
https://doi.org/10.31399/asm.cp.istfa2021p0296
Autor:
Ching-Hsiang Chan, Kuang-Tse Ho
Publikováno v:
International Symposium for Testing and Failure Analysis.
This research summarizes a variety of physical failure modes of GaAs-based oxide-confined VCSELs and their root causes. Standard failure analysis procedure, which includes defect fault isolation by PEM or IR-OBIRCH and physical inspection by TEM anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a94ba1b7a7acce84add27c21904db48f
https://doi.org/10.31399/asm.cp.istfa2020p0317
https://doi.org/10.31399/asm.cp.istfa2020p0317
Publikováno v:
International Symposium for Testing and Failure Analysis.
This research sets up failure analysis flow to verify failure mechanisms and root causes of different kinds of contact leakage. This flow mainly uses EBIC, C-AFM and nano-probing to do fault isolation and confirm electrical failure mechanisms. Approp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5059323ba88499cd44775c07edddb5da
https://doi.org/10.31399/asm.cp.istfa2019p0111
https://doi.org/10.31399/asm.cp.istfa2019p0111