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pro vyhledávání: '"Kuang-Tse Ho"'
Autor:
Kuang-Tse Ho, Cheng-Che Li
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper discusses the steps involved in the failure analysis of power semiconductor devices in which leakage currents are observed and can be traced to doping-profile variations in ion-implanted layers. The discovery and assessment of such defects
Autor:
Kuang-Tse Ho, Cheng-Che Li
Publikováno v:
International Symposium for Testing and Failure Analysis.
Vertical-cavity surface-emitting lasers (VCSELs) have many advantages over edge-emitting devices, but they tend to be more sensitive to increasing current density both in lifetime and reliability. To better understand this relationship, the authors i
Autor:
Ching-Hsiang Chan, Kuang-Tse Ho
Publikováno v:
International Symposium for Testing and Failure Analysis.
This research summarizes a variety of physical failure modes of GaAs-based oxide-confined VCSELs and their root causes. Standard failure analysis procedure, which includes defect fault isolation by PEM or IR-OBIRCH and physical inspection by TEM anal
Publikováno v:
International Symposium for Testing and Failure Analysis.
This research sets up failure analysis flow to verify failure mechanisms and root causes of different kinds of contact leakage. This flow mainly uses EBIC, C-AFM and nano-probing to do fault isolation and confirm electrical failure mechanisms. Approp
Autor:
ASM Interational
The theme for the 2019 conference is Novel Computing Architectures. Papers will include discussions on the advent of Artificial Intelligence and the promise of quantum computing that are driving disruptive computing architectures; Neuromorphic chip d