Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Kuang-Hui Li"'
Autor:
Jung-Hong Min, Kwangjae Lee, Tae-Hoon Chung, Jung-Wook Min, Kuang-Hui Li, Chun Hong Kang, Hoe-Min Kwak, Tae-Hyeon Kim, Youyou Yuan, Kyoung-Kook Kim, Dong-Seon Lee, Tien Khee Ng, Boon S. Ooi
Publikováno v:
Opto-Electronic Science, Vol 1, Iss 10, Pp 1-11 (2022)
Epitaxially grown III-nitride alloys are tightly bonded materials with mixed covalent-ionic bonds. This tight bonding presents tremendous challenges in developing III-nitride membranes, even though semiconductor membranes can provide numerous advanta
Externí odkaz:
https://doaj.org/article/94e2bc66c924418a81f7b36d9d875ce3
Autor:
Jian-Wei Liang, Kuang-Hui Li, Chun Hong Kang, Laurentiu Braic, Adrian Emil Kiss, Nicolae Catalin Zoita, Tien Khee Ng, Boon S. Ooi
Publikováno v:
AIP Advances, Vol 10, Iss 11, Pp 119901-119901-1 (2020)
Externí odkaz:
https://doaj.org/article/90a7fe89b0314f1dad60e8cd84946c32
Autor:
Jian-Wei Liang, Kuang-Hui Li, Chun Hong Kang, Laurentiu Braic, Adrian Emil Kiss, Nicolae Catalin Zoita, Tien Khee Ng, Boon S. Ooi
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065318-065318-12 (2020)
Single-crystal nickel oxide (NiO) was grown, using epitaxial titanium nitride (TiN) as a preorienting interlayer, on both the lattice-matching substrate of magnesium oxide in the (100) surface orientation, MgO-(100), and a lattice-mismatched silicon
Externí odkaz:
https://doaj.org/article/b97d9b2cc9534a41b1828db9a95b9cd3
Lattice-matched III-nitride structures comprising BAlN, BGaN, and AlGaN for ultraviolet applications
Autor:
Feras AlQatari, Muhammad Sajjad, Ronghui Lin, Kuang-Hui Li, Udo Schwingenschlögl, Xiaohang Li
Publikováno v:
Materials Research Express, Vol 8, Iss 8, p 086202 (2021)
The optical properties of BAlN, BGaN and AlGaN ternary alloys are investigated using hybrid density functional for the design of lattice-matched optical structures in the ultraviolet spectrum. The calculated AlGaN properties agree well with previous
Externí odkaz:
https://doaj.org/article/138ad39018094d8fbe153479631b0cee
Autor:
Nasir Alfaraj, Mufasila Mumthaz Muhammed, Kuang-Hui Li, Bilal Janjua, Renad A. Aljefri, Haiding Sun, Tien Khee Ng, Boon S. Ooi, Iman S. Roqan, Xiaohang Li
Publikováno v:
AIP Advances, Vol 7, Iss 12, Pp 125113-125113-9 (2017)
In this study, we examine thermodynamic photoinduced disorder in AlGaN nanowires through their steady-state and transient photoluminescence properties. We correlate the energy exchange during the photoexcitation and photoemission processes of the lig
Externí odkaz:
https://doaj.org/article/fb1eb4439e6f42ae82fd4baef33b345f
Autor:
Jose Manuel Taboada Vasquez, Che-Hao Liao, Xiao Tang, Xiaohang Li, Na Xiao, Kuang-Hui Li, Chuanju Wang
Publikováno v:
Journal of the European Ceramic Society. 42:175-180
The authors would like to thank KAUST Baseline Funds BAS/1/1664-01-01, Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01, and GCC Research Council REP/1/3189-01-01 for their support.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecced473d1dbc09a0f6a9372400c1a67
https://doi.org/10.1016/j.jeurceramsoc.2021.09.064
https://doi.org/10.1016/j.jeurceramsoc.2021.09.064
Autor:
Boon S. Ooi, Kyoungho Kim, Jae-Seong Lee, Si-Young Bae, Seong-Min Jeong, Yonghyeon Kim, Jung-Hong Min, Kwang Jae Lee, Chun Hong Kang, Dong-Seon Lee, Tien Khee Ng, Kuang-Hui Li, Jung-Wook Min
Publikováno v:
ACS Applied Materials & Interfaces
Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. Such membranes can potentially offer effective cooling and dimensional scale-down
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4cd4fefb17d3069f818140284d392a6
https://doi.org/10.1021/acsami.1c01042
https://doi.org/10.1021/acsami.1c01042
Autor:
Xiao Tang, Yi Lu, Rongyu Lin, Che-Hao Liao, Yue Zhao, Kuang-Hui Li, Na Xiao, Haicheng Cao, Wedyan Babatain, Xiaohang Li
Publikováno v:
Applied Physics Letters. 122:121101
In this research, β-Ga2O3/NiO heterostructures were grown directly on CeO2 buffered Hastelloy flexible substrates. With pulsed laser deposition under high temperatures, as-grown β-Ga2O3 and NiO thin films have a preferred out-of-plane orientation a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f9fa14fafd916251c7a3566a139337d
https://doi.org/10.1063/5.0146030
https://doi.org/10.1063/5.0146030
Autor:
Xiao Tang, Shibin Krishna, Jose Tauboada, Che-Hao Liao, Na Xiao, Rongyu Lin, Chen Liu, Xiaohang Li, Kuang-Hui Li, Dongxing Zheng
Publikováno v:
Journal of Materials Chemistry C. 9:15868-15876
β-Ga2O3 is a wide bandgap semiconductor material that is promising for many fields such as gas sensors, UV detectors, and high-power electronics. Until now, most epitaxial β-Ga2O3 thin films could only be realized on six-fold symmetric single cryst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ca8e45e69fb1d8dca466f73aff5380f
https://doi.org/10.1039/d1tc02852a
https://doi.org/10.1039/d1tc02852a
Autor:
Chun Hong Kang, Omar Alkhazragi, Lutfan Sinatra, Sultan Alshaibani, Yue Wang, Kuang-Hui Li, Meiwei Kong, Marat Lutfullin, Osman M. Bakr, Tien Khee Ng, Boon S. Ooi
Publikováno v:
Optics express. 30(6)
The use of optical carrier frequencies will enable seamless data connection for future terrestrial and underwater internet uses and will resolve the technological gap faced by other communication modalities. However, several issues must be solved to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8043486a6773b326b876c65f320e22b
https://pubmed.ncbi.nlm.nih.gov/35299397
https://pubmed.ncbi.nlm.nih.gov/35299397