Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Kuang-Hsiang Liao"'
Publikováno v:
Journal of Alloys and Compounds. 867:159050
Cu/AlN joints are critical for applications in electronic components and high-power electronic devices. To prevent mechanical failures at the interface of the joints resulting from mismatched thermal expansion coefficient (CTE) between Cu and AlN, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ab7fcc232f9f3d1eb731408d4ee01d1
https://doi.org/10.1016/j.jallcom.2021.159050
https://doi.org/10.1016/j.jallcom.2021.159050
Publikováno v:
Journal of Alloys and Compounds. 581:250-256
Cu(In 1− x ,Ga x )Se 2 (CIGS) thin films were prepared by the sputtering of CuInGa (CIG) alloy precursors and CuGa/In stacked precursors followed by selenization. The effects of the using CIG precursors prepared by various methods and that of use o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a8406e31e367ad2d42113291406cb9b
https://doi.org/10.1016/j.jallcom.2013.06.177
https://doi.org/10.1016/j.jallcom.2013.06.177
Publikováno v:
Applied Surface Science. 270:139-144
Cu(In 1− x ,Ga x )Se 2 (CIGS) thin films were prepared by the sputtering of CuInGa precursors followed by chalcogenization via an isothermal (one-zone) selenization and a two-zone selenization. The effects of two selenization processes on the micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3488217c2d1e015b86e3aa7497b5c5a
https://doi.org/10.1016/j.apsusc.2012.12.142
https://doi.org/10.1016/j.apsusc.2012.12.142
Publikováno v:
Applied Surface Science. 263:476-480
CuInGa (CIG) ternary targets were prepared by vacuum arc remelting and used to deposit CIG thin films through direct current (DC) sputtering. We adjusted the sputtering energy (1–2 kWh) by tuning both the sputtering power and the accumulative sputt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::376019782f2f51df8dda67e469a912e7
https://doi.org/10.1016/j.apsusc.2012.09.087
https://doi.org/10.1016/j.apsusc.2012.09.087
The effect of deposition parameters and post treatment on the electrical properties of Mo thin films
Publikováno v:
Thin Solid Films. 520:5936-5939
In this study, we deposited low-resistivity molybdenum (Mo) thin films on soda-lime glass substrates with good adhesion. We adjusted various deposition parameters such as the sputtering power (52–102 W), working distance (5.5–9 cm) and annealing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::750cebfeefa35d4b7791d030ed653f24
https://doi.org/10.1016/j.tsf.2012.05.027
https://doi.org/10.1016/j.tsf.2012.05.027
Publikováno v:
Applied Physics Express. 8:042301
Evaporated Cu2SnSe3 (CTSe) and ZnSe bilayers are used as precursors for the fabrication of Cu2ZnSnSe4 (CZTSe) thin films. Large grains (i.e., >1 µm) in CZTSe were obtained at a relatively low annealing temperature of 500 °C. The stacking order of p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::000066310a63fceb1eaabfcf6e3f5c6f
https://doi.org/10.7567/apex.8.042301
https://doi.org/10.7567/apex.8.042301
Autor:
Kuang-Hsiang, Liao, 廖光祥
103
Prior to preparation of Cu(In1-x,Gax)Se2 (CIGS), the low-resistivity molybdenum (Mo) thin films were deposited on substrates by DC magnetron sputtering system, followed annealing from 200 to 400 ℃. The deposition parameters such as the spu
Prior to preparation of Cu(In1-x,Gax)Se2 (CIGS), the low-resistivity molybdenum (Mo) thin films were deposited on substrates by DC magnetron sputtering system, followed annealing from 200 to 400 ℃. The deposition parameters such as the spu
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/3quhwr
Publikováno v:
Applied Physics Express; Apr2015, Vol. 8 Issue 4, p1-1, 1p