Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Kuang-Han Chen"'
Publikováno v:
Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db5c18bf14a558fc0045c27acb96f7f4
https://doi.org/10.1117/12.2641214
https://doi.org/10.1117/12.2641214
Autor:
Yang-Chih Chiu, Brian Lee, ZhengFang Liu, Tamba Gbondo-Tugbawa, Kuang Han Chen, Hua Ding, JinBing Liu, Aaron Gower-Hall, Flora Li, Helen Li, Chunlei Zhang
Publikováno v:
SPIE Proceedings.
Chemical mechanical polishing (CMP) has been a critical enabling technology in shallow trench isolation (STI), which is used in current integrated circuit fabrication process to accomplish device isolation. Excessive dishing and erosion in STI CMP pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0934e7080a3a24f524fc6c908b883ce
https://doi.org/10.1117/12.2219912
https://doi.org/10.1117/12.2219912
Publikováno v:
SPIE Proceedings.
Traditional RC extraction flows mostly consider interconnect thickness variations caused by etch and CMP processes in a way of rule-based approach where a form of tables or polynomials is used. While such rulebased approaches are easily incorporated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d28347671555860685751e3fd4e20b9e
https://doi.org/10.1117/12.2219118
https://doi.org/10.1117/12.2219118
Autor:
Tamba Gbondo-Tugbawa, Ushasree Katakamsetty, Brian Lee, Kuang-Han Chen, Yongfu Li, Jaime Bravo, Aaron Gower-Hall, Sang Min Han, Jansen Chee, Colin Hui
Publikováno v:
SPIE Proceedings.
As we move to advanced technology nodes, the requirements on within chip and across wafer planarity are becoming more demanding [1]. Also, the number of Chemical Mechanical Polishing (CMP) processes and steps used in microelectronic chip manufacturin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::153c0293f8e0cb85fc2e7965471f09aa
https://doi.org/10.1117/12.2219545
https://doi.org/10.1117/12.2219545
Autor:
Puneet Sharma, Philippe Hurat, Jayathi Subramanian, Larry Layton, Kuang-Han Chen, Bala Kasthuri, Vikas Tripathi
Publikováno v:
Design for Manufacturability through Design-Process Integration VI.
This paper presents the requirements for the Design for Manufacturability (DFM) checks such as lithography, and Chemical and Mechanical Polishing (CMP) at 28nm technology node, and the need to perform these DFM checks, early in the design phase and w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64cfd93527d7cbcd3343ff5dd68b993b
https://doi.org/10.1117/12.916219
https://doi.org/10.1117/12.916219
Accurately predicting copper interconnect topographies in foundry design for manufacturability flows
Autor:
Ki Duk Tak, Hua Ding, Philippe Hurat, Linda Zhuang, Josh Yang, Jenny Jiang, Daniel Lu, Zhong Fan, Kuang Han Chen, Elain Zou, Li-Fu Chang
Publikováno v:
SPIE Proceedings.
This paper presents a model-based Chemical Mechanical Polishing (CMP) Design for Manufacturability (DFM) () methodology that includes an accurate prediction of post-CMP copper interconnect topographies at the advanced process technology nodes. Using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::413cde523139736cf205c08fd971859a
https://doi.org/10.1117/12.879310
https://doi.org/10.1117/12.879310
Autor:
Seung-Weon Paek, Aaron Gower-Hall, Jinwoo Lee, Kuang Han Chen, Tamba Gbondo-Tugbawa, Naya Ha, Philippe Hurat, Kee Sup Kim
Publikováno v:
SPIE Proceedings.
Traditionally model based CMP check and hotspot detection are only done at the top level of the design because full chip assembly is required to capture CMP long range effect. When manufacturing hotspots are found just before tape out and layout modi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3db15527b2d254a1537b1e7599e4936
https://doi.org/10.1117/12.880899
https://doi.org/10.1117/12.880899
Autor:
Xian Bin Wang, Colin Hui, Subramanian Jayathi, Chi-Min Yuan, Laertis Economikos, Ushasree Katakamsetty, Xiang Hua, Tamba Gbondo-Tugbawa, Vikas Mehrotra, Kuang Han Chen, Song Li, Taber H. Smith, Mohammed Fazil Fayaz, Stephen E. Greco, Haigou Huang
Publikováno v:
SPIE Proceedings.
Chemical Mechanical Polishing (CMP) has been used in the manufacturing process for copper (Cu) damascene process. It is well known that dishing and erosion occur during CMP process, and they strongly depend on metal density and line width. The inhere
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df7eefa136d5fede5b72d4191e8b8e20
https://doi.org/10.1117/12.816556
https://doi.org/10.1117/12.816556
Publikováno v:
ISQED
As part of copper (Cu) damascene manufacturing process, chemical mechanical polishing (CMP) has been applied to keep the uniformity of metal thickness, and the planarity of chip/wafer to accommodate today's shrinking lithography process window. CMP i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83897ce043d7ac0cc85128d7a1d0c30a
https://doi.org/10.1109/isqed.2008.4479758
https://doi.org/10.1109/isqed.2008.4479758
Publikováno v:
9th International Symposium on Quality Electronic Design (ISQED 2008); 2008, p365-368, 4p