Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Kuan-Wun Lin"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 960-969 (2022)
The impact of oxide charges on the metal-insulator-semiconductor (MIS) device’s capacitance $({C})$ and conductance $({G})$ was studied in this work. A model to calculate MIS device’s ${C}$ and ${G}$ under the considerations of oxide charges, dop
Externí odkaz:
https://doaj.org/article/a9e9557c3c4b4e2caba711884291f0ae
Publikováno v:
IEEE Access, Vol 9, Pp 163929-163937 (2021)
Current and capacitance characteristics of Al/SiO2/Si(p) metal-insulator-semiconductor tunnel diode (MISTD) with oxide thickness in the range of about 2–4 nm were fabricated and studied in detail in this work. We found that the saturation reverse b
Externí odkaz:
https://doaj.org/article/e9f2fd4e5c3742bab5dd36b29d3e3672
Influence of Outer Oxide Charges on the Electrostatics of Metal-Insulator-Semiconductor Tunnel Diode
Publikováno v:
ECS Transactions. 111:99-104
In this work, the impact of outer oxide charges on the electrostatics of metal-insulator-semiconductor tunnel diodes (MISTD) is discussed. The existence of outer oxide charges will significantly affect the critical voltage V c of MISTD in the strong
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fb37a94725fcaaad4af12c5bc9cb6c5
https://doi.org/10.1149/11101.0099ecst
https://doi.org/10.1149/11101.0099ecst
Publikováno v:
IEEE Transactions on Electron Devices. 69:1972-1978
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c73ceffdf4af3b3e890cefd6caa408f0
https://doi.org/10.1109/ted.2022.3147747
https://doi.org/10.1109/ted.2022.3147747
Autor:
Jenn-Gwo Hwu, Kuan-Wun Lin
Publikováno v:
IEEE Transactions on Electron Devices. 67:1845-1851
The effect of selective-area oxide thickening in metal–insulator–semiconductor (MIS) tunnel structures on their current–voltage characteristics was investigated in this article. Under a low applied voltage ( $> 100\times $ with respect to the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a33a27f6cf37e8cdca4cb9067ce768c1
https://doi.org/10.1109/ted.2020.2974963
https://doi.org/10.1109/ted.2020.2974963
Publikováno v:
IEEE Transactions on Electron Devices. 66:279-285
The prerequisite of gate oxide local thinning (OLT) effect for subthreshold swing (SS) reduction to sub-60 mV/decade on charge-coupled metal–insulator–semiconductor (MIS) tunnel transistor is specified in this paper. The OLT process is employed b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55dcb783cf46eccb76b4ff23e7c2bee2
https://doi.org/10.1109/ted.2018.2879654
https://doi.org/10.1109/ted.2018.2879654
Autor:
Kuan-Wun Lin, Jenn-Gwo Hwu
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:035004
The influence of local oxide thinning (LOT) spots on the electrostatics of MOS capacitors was studied in this work. The capacitors are found to suffer from severe deep depletion (DD) above threshold once LOT spots that cause significant gate leakage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b2c92fbce0127c62635425689549a82
https://doi.org/10.1149/2162-8777/ac5a6c
https://doi.org/10.1149/2162-8777/ac5a6c
Transient Two-State Characteristics in MIS(p) Tunnel Diode with Edge-Thickened Oxide (ETO) Structure
Publikováno v:
ECS Journal of Solid State Science and Technology. 9:103006
In this work, the transient two-state characteristics of edge thickened oxide (ETO) metal-insulator-semiconductor (MIS) tunnel diodes with various gate electrode areas were studied. The ETO MIS structures were first compared with the planar MIS struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b681acf25cc4f98b5b1174a8d696211b
https://doi.org/10.1149/2162-8777/abc576
https://doi.org/10.1149/2162-8777/abc576
Publikováno v:
ECS Journal of Solid State Science & Technology; 2020, Vol. 9 Issue 10, p1-6, 6p