Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Kuan-Po Lin"'
Autor:
Kuan-Po Lin, Hung-Yu Wei
Publikováno v:
Journal of Computer Systems, Networks, and Communications, Vol 2010 (2010)
IEEE 802.16j is an emerging wireless broadband networking standard that integrates infrastructure base stations with multihop relay technology. Based on the idle mode operation in IEEE 802.16j, we propose a novel location management and paging scheme
Externí odkaz:
https://doaj.org/article/5a3da1742e3b4648b505dad4b9485db0
Autor:
Kuan-Po Lin, 林冠伯
105
B+ → pΛ ̄1520 is one of the simplest two-body baryonic B decay modes. Wereconstruct Λ ̄1520 from ̄p and K+, then search for the signal B+ → pΛ1520(→ ppK ̄+). Simulating the data collected at the Υ(4S) resonance with the Belle d
B+ → pΛ ̄1520 is one of the simplest two-body baryonic B decay modes. Wereconstruct Λ ̄1520 from ̄p and K+, then search for the signal B+ → pΛ1520(→ ppK ̄+). Simulating the data collected at the Υ(4S) resonance with the Belle d
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/ak5wc9
Autor:
Kuan-Po Lin, 林冠伯
103
Indentation experiment is one of the most useful method to probe the strength of materials that are manufactured at micro or nano scales. When indentation depth decrease to micro meters, the hardness increase as the indentation depth decreas
Indentation experiment is one of the most useful method to probe the strength of materials that are manufactured at micro or nano scales. When indentation depth decrease to micro meters, the hardness increase as the indentation depth decreas
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/98024872156116250368
Autor:
Kuan-Po Lin, 林冠伯
96
According to the characteristic of idle mode of IEEE 802.16j, we provide a novel location management scheme. It combines with paging area based scheme and timer- based scheme. The paging area based scheme is the paging and location update in
According to the characteristic of idle mode of IEEE 802.16j, we provide a novel location management scheme. It combines with paging area based scheme and timer- based scheme. The paging area based scheme is the paging and location update in
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/69511437011392490768
Autor:
Kuan-Po Lin, 林冠伯
89
In this thesis, we propose a newly designed n+-InGaAs/n-GaAs composite doped channel field-effect transistor(CDCFET) grown by low-pressure metal organic chemical vapor deposition(LP-MOCVD).The thin n+- InGaAs and n-GaAs channel layer are empl
In this thesis, we propose a newly designed n+-InGaAs/n-GaAs composite doped channel field-effect transistor(CDCFET) grown by low-pressure metal organic chemical vapor deposition(LP-MOCVD).The thin n+- InGaAs and n-GaAs channel layer are empl
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/63304850806532603972
Publikováno v:
Handbook of Mechanics of Materials ISBN: 9789811068553
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f17d997160741ee093296cfb9dc1d38
https://doi.org/10.1007/978-981-10-6884-3_26
https://doi.org/10.1007/978-981-10-6884-3_26
Publikováno v:
2015 International Symposium on Next-Generation Electronics (ISNE).
The NTUHEP group is currently designing a BGO sytem to monitor the instant luminosity by measuring the back-to-back Bhabha events for BEAST2, a special detector for the commissioning of SuperKEKB and Belle2. The experiment of energy calibration will
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dafede48ffdf4cd4d52cb24d44da42e
https://doi.org/10.1109/isne.2015.7131951
https://doi.org/10.1109/isne.2015.7131951
Autor:
Kuo-Hui Yu, Rong-Chau Liu, Chin-Chuan Cheng, Wen-Chau Liu, Kuan-Po Lin, Kong-Beng Thei, Chih-Hung Yen, Kun-Wei Lin
Publikováno v:
IEEE Transactions on Electron Devices. 48:2677-2683
The temperature-dependent characteristics of an n+-InGaAs/n-GaAs composite doped channel (CDC) heterostructure field-effect transistor (HFET) have been studied. Due to the reduction of leakage current and good carrier confinement in the n+-InGaAs/n-G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17456cf077ad80751d41860e1d73b465
https://doi.org/10.1109/16.974689
https://doi.org/10.1109/16.974689
Autor:
Wen-Hui Chiou, Cheng-Zu Wu, Chih-Hung Yen, Hsi-Jen Pan, Wen-Chau Liu, Kuan-Po Lin, Chin-Ying Chen
Publikováno v:
Le Journal de Physique IV. 11:Pr3-931
We propose two InGaP/GaAs resonant tunneling bipolar transistors (RTBT's) with different superlattice (SL) structures in the emitters. Based on the calculations of transmission probability, the ground-state and first excited-state minibands are estim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd22a9251d65b10324a288f4c6ff1adc
https://doi.org/10.1051/jp4:20013116
https://doi.org/10.1051/jp4:20013116
Autor:
Chih-Kai Wang, Hung-Ming Chuang, Kuan Po Lin, Kuo-Hui Yu, Chin-Chuan Cheng, Wen-Chau Liu, Kun-Wei Lin, Chih-Hung Yen
Publikováno v:
Le Journal de Physique IV. 11:Pr3-951
A new heterostructure field-effect transistor (HFET) with GaAs/InGaP camel-like gate and GaAs/InGaAs channel structure has been fabricated by MOCVD. The studied device exhibits a large barrier height, high breakdown voltage, and low leakage current e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc478515e9929875f802585c7d2c0d23
https://doi.org/10.1051/jp4:20013119
https://doi.org/10.1051/jp4:20013119