Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Kuan-Lin Fu"'
Autor:
Yun-Fong Lee, Yu-Chen Huang, Jui-Sheng Chang, Ting-Yi Cheng, Po-Yu Chen, Wei-Chieh Huang, Mei-Hsin Lo, Kuan-Lin Fu, Tse-Lin Lai, Po-Kai Chang, Zhong-Yen Yu, Cheng-Yi Liu
Publikováno v:
Royal Society Open Science, Vol 11, Iss 9 (2024)
Fine-grain copper (Cu) films (grain size: 100.36 nm) with a near-atomic-scale surface (0.39 nm) were electroplated. Without advanced post-surface treatment, Cu–Cu direct bonding can be achieved with present-day fine-grain Cu films at 130℃ in air
Externí odkaz:
https://doaj.org/article/d8a16e4e273341e99b79d76575454a59
Autor:
Chia-Hung Lee, Erh-Ju Lin, Jyun-Yang Wang, Yi-Xuan Lin, Chen-Yu Wu, Chung-Yu Chiu, Ching-Yu Yeh, Bo-Rong Huang, Kuan-Lin Fu, Cheng-Yi Liu
Publikováno v:
Nanomaterials, Vol 11, Iss 7, p 1630 (2021)
Tensile tests were carried on the electroplated Cu films with various densities of twin grain boundary. With TEM images and a selected area diffraction pattern, nano-twinned structure can be observed and defined in the electroplated Cu films. The den
Externí odkaz:
https://doaj.org/article/890066b2ded346778f4a399fb5dd9352
Autor:
Chia Hung Lee, J. S. Chang, Y. X. Lin, C. Y. Wu, J. Y. Wang, C. Y. Chen, T. H. Yen, Chung Yu Chiu, Ching Yu Yeh, Cheng Yi Liu, Bo Rong Huang, Kuan Lin Fu
Publikováno v:
Journal of Electronic Materials. 50:6584-6589
The present work investigated the effect of Ag additives on the consumption of cathode Cu pad under electromigration in a current-stressed Cu/Sn3.5Ag/Cu flip-chip structure. The consumption rate of a cathode Cu pad in a pure Sn system is faster than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bad0bda752755a0c811dc6f148047f0
https://doi.org/10.1007/s11664-021-09234-7
https://doi.org/10.1007/s11664-021-09234-7
Autor:
C. Y. Wu, Cheng Yi Liu, Bo Rong Huang, Kuan Lin Fu, Chia Hung Lee, Y. X. Lin, Ching Yu Yeh, J. S. Chang, Chung Yu Chiu, J. Y. Wang
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:18605-18615
Typically, Sn cannot be finished on Ni and Ag surfaces via the immersion process. In this work, through galvanic reaction, immersion Sn finish was processed on an immersion Ag finish coexisting with a Ni surface. Herein, the detailed mechanism of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0df18f1cbf88d540d62aeabb3e9b5579
https://doi.org/10.1007/s10854-021-06306-6
https://doi.org/10.1007/s10854-021-06306-6
Autor:
Kuan-Lin Fu, Shen-Iuan Liu
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 28:1726-1735
We present a 64-Gb/s four-level pulse amplitude modulation (PAM-4) optical receiver with the amplitude/phase correction and the threshold voltage/data level calibration, utilizing an inverter-based transimpedance amplifier (TIA). A variable gain ampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0c812c5a029ef0de4c55a73aa1bd608
https://doi.org/10.1109/tvlsi.2020.2991721
https://doi.org/10.1109/tvlsi.2020.2991721
Autor:
Y. X. Lin, Chia Hung Lee, C. Y. Wu, Jui Sheng Chang, J. Y. Wang, Chung Yu Chiu, Ching Yu Yeh, Bo Rong Huang, Kuan Lin Fu, ChengYi Liu
Typically, Sn cannot be finished on Ni and Ag surfaces via the immersion process. In this work, through galvanic reaction, immersion Sn finish was processed on an immersion Ag finish coexisting with a Ni surface. Herein, the detailed mechanism of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4cea236d62cff8bf28886bef7bd1114
https://doi.org/10.21203/rs.3.rs-308958/v1
https://doi.org/10.21203/rs.3.rs-308958/v1
Autor:
Chien-Chung Lin, Zhong Jie Zhang, Shen-Iuan Liu, Tomas Pankra, Chang-Fa Yang, Kuan-Lin Fu, Hen-Wai Tsao, Chun-Liang Yang, Shih-Hsiang Hsu, Lung Wei Chung, San-Liang Lee, Jyehong Chen
Publikováno v:
WOCC
We reported the progress of developing 400-Gb/s optical transceivers with 1.3-μm electro-absorption modulators for optical interconnect applications in data centers. The key technologies include high-speed light sources, silicon photonics based WDM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5ad4ac527698c03b293270d982e5068
https://doi.org/10.1109/wocc.2018.8373790
https://doi.org/10.1109/wocc.2018.8373790
Autor:
Kuan-Lin Fu, Shen-Iuan Liu
Publikováno v:
A-SSCC
A 56Gbps PAM-4 optical receiver front-end is presented. In order to reduce the input-referred current noise of the receiver front-end, the shunt feedback resistor Rf of the TIA is enlarged. And, the equalizer is inserted to boost the high-frequency g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdd30876c2022bee8b3e2c3f53774d52
https://doi.org/10.1109/asscc.2017.8240220
https://doi.org/10.1109/asscc.2017.8240220
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 61:845-849
A 3–25 Gb/s four-channel receiver with noise-canceling transimpedance amplifiers and power-scalable limiting amplifiers is presented. It is fabricated in a 40-nm CMOS process. Each channel provides an overall gain of 64 $\hbox{dB}\cdot \Omega$ . Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1615c00d2387308590a15a111771c0a
https://doi.org/10.1109/tcsii.2014.2350372
https://doi.org/10.1109/tcsii.2014.2350372