Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Kuan-Kan Hu"'
Publikováno v:
AIP Advances, Vol 5, Iss 10, Pp 107128-107128-5 (2015)
We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were anneale
Externí odkaz:
https://doaj.org/article/db0132bf3be44b20af47630c943a33e0
Autor:
Kuan-kan Hu, 胡寬侃
103
The kinetics of solid phase epitaxial regrowth (SPER) is studied in amorphous silicon doping with dopant and isovalent impurities. Samples were co-implanted with phosphorus (P) and arsenic (As) to systematically form different proportion of
The kinetics of solid phase epitaxial regrowth (SPER) is studied in amorphous silicon doping with dopant and isovalent impurities. Samples were co-implanted with phosphorus (P) and arsenic (As) to systematically form different proportion of
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/6xgw23
Publikováno v:
Acta Materialia. 153:186-192
The evolution of the facet-facet groove at grain boundaries in multi-crystalline Si during solidification was investigated by in situ observation of the melt/crystal interface. The grain boundaries changed their propagation direction without any new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65c2611472d5e154a0331541df64fa1e
https://doi.org/10.1016/j.actamat.2018.04.062
https://doi.org/10.1016/j.actamat.2018.04.062
Autor:
Chuanshan Tian, Guosheng Shi, Nan Sheng, Gang Huang, Xing Liu, Y. Ron Shen, Kuan-Kan Hu, Haiping Fang, Yu-Chieh Wen
Publikováno v:
The Journal of Physical Chemistry C. 122:9111-9116
By combining theoretical calculations and experimental observations, we show that Na+ can be shared by three charged −COO– groups of the deprotonated carboxyl-terminated self-assembled monolayers i...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f32e436c42267b149f010a30e702a4a
https://doi.org/10.1021/acs.jpcc.8b02065
https://doi.org/10.1021/acs.jpcc.8b02065
Publikováno v:
Applied Physics Express. 13:105501
The formation of multiple parallel twin boundaries at grain boundary grooves during Si solidification was investigated using an in situ observation system. Twin boundaries were repeatedly generated at a crystal/melt interface from a step-like grain b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d94ed6e36a4a022a75f3cdf7a0ac78b
https://doi.org/10.35848/1882-0786/abb57d
https://doi.org/10.35848/1882-0786/abb57d
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 3, p033503-1-033503-4, 4p, 3 Graphs
Publikováno v:
Materialia. 7:100386
The instability of crystal/melt interfaces including numerous Σ3, small-angle and large-angle grain boundaries during the unidirectional growth of Si was investigated, using an in situ observation system. Planar crystal/melt interfaces including Σ3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59b1fbf7594e0927091a547de41022db
https://doi.org/10.1016/j.mtla.2019.100386
https://doi.org/10.1016/j.mtla.2019.100386
Publikováno v:
AIP Advances, Vol 5, Iss 10, Pp 107128-107128-5 (2015)
We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were anneale
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5276c5a00907ece466c627662ea0efb6
https://doi.org/10.1063/1.4934674
https://doi.org/10.1063/1.4934674
Publikováno v:
Applied Physics Express. 8:021302
Solid-phase-epitaxial-regrowth (SPER) dynamics of ion-implanted silicon were studied through in situ time-resolved reflectivity measurements. The roles of strain induced by dopant and isovalent impurities with different atomic sizes were disentangled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd5d495db2df6e9fed3c278834ceda0c
https://doi.org/10.7567/apex.8.021302
https://doi.org/10.7567/apex.8.021302