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Autor:
Jung-En Tsai, Kuei-Shu Chang-Liao, Yan-Lin Li, Wen-Hsien Huang, Chang-Hong Shen, Kuan-Chi Chou, Tzu-Cheng Chao, Jia-Min Shieh, Hsin-Kai Fang
Publikováno v:
IEEE Electron Device Letters. 41:1766-1769
Operation characteristics of polycrystalline germanium (poly-Ge) tri-gate junctionless (JL) charge-trapping (CT) flash memory devices with stacked tunneling layer were studied in this work. The programming speeds of poly-Ge tri-gate JL flash device w