Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Kuan Hong Tan"'
Autor:
Wen Siang Lew, Putu Andhita Dananjaya, Eng Huat Toh, Samuel C. W. Chow, Kuan Hong Tan, Desmond Jia Jun Loy, Somsubhra Chakrabarti
Publikováno v:
ACS Applied Electronic Materials. 2:3160-3170
We report a switching model that directly explains the change in activation energy (EAC) at different RESET stop voltages (Vstop) in HfO2-based resistive random access memory devices. The dependenc...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::123a86bbb5bddba5a24ca214a219d68a
https://doi.org/10.1021/acsaelm.0c00515
https://doi.org/10.1021/acsaelm.0c00515
Autor:
Eng Huat Toh, Desmond Jia Jun Loy, Samuel Chen Wai Chow, Kunqi Hou, Wen Siang Lew, Somsubhra Chakrabarti, Mun Yin Chee, Kuan Hong Tan, Yong Chiang Ee, Gerard Joseph Lim, Jia Min Ang, Putu Andhita Dananjaya, Jia Rui Thong
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
A multi-level state HfO 2 -based resistive switching model is reported, where the increase in stopping voltage (V stop ) and thus activation energy (E AC ) is attributed to the depletion of oxygen vacancy (V o ) concentration (n c ) during reset. Hop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c6aa34845712af4e51e99da3425e8bd
https://doi.org/10.1109/snw50361.2020.9131623
https://doi.org/10.1109/snw50361.2020.9131623