Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ku-Hung Chen"'
Autor:
Ku-Hung Chen, 陳谷泓
93
In order to make one image have an ability to simultaneously cope with copyright protection, secret communication and data management, a novel technique combining data hiding with digital watermarking is presented in this paper. Firstly, the
In order to make one image have an ability to simultaneously cope with copyright protection, secret communication and data management, a novel technique combining data hiding with digital watermarking is presented in this paper. Firstly, the
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/68277776611938134311
Autor:
Chih-Kuo Tseng, Yimin Kang, Wei-Ting Chen, Neil Na, Ku-Hung Chen, Han-Din Liu, Ming-Chang M. Lee
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 20:17-21
We present a butt-coupled Germanium (Ge) metal-semiconductor-metal photodetectors on silicon (Si) waveguides. This device is implemented by a novel process using self-aligned microbonding technique and rapid-melt-growth method for monolithically inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca35888680e32bd57dca42cbed3e5d1f
https://doi.org/10.1109/jstqe.2013.2296854
https://doi.org/10.1109/jstqe.2013.2296854
Publikováno v:
IEEE Photonics Technology Letters. 26:591-594
A silicon avalanche photodetector with a low breakdown voltage of -6.78 V is demonstrated by narrowing down the intrinsic layer width of interdigitated p-i-n junctions to ~ 150 nm. It reaches the physical limit of avalanche breakdown in which the per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e52dee2af58df40eb9b3d826baad42a
https://doi.org/10.1109/lpt.2014.2300853
https://doi.org/10.1109/lpt.2014.2300853
Autor:
Ming-Chang M. Lee, Chih-Kuo Tseng, Yimin Kang, Neil Na, Ku-Hung Chen, Han-Din Liu, Wei-Ting Chen
Publikováno v:
Scientific Reports
A novel technique using surface tension to locally bond germanium (Ge) on silicon (Si) is presented for fabricating high performance Ge/Si photodiodes. Surface tension is a cohesive force among liquid molecules that tends to bring contiguous objects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1b9389d43c797e07f109628cde5d769
http://europepmc.org/articles/PMC3828570
http://europepmc.org/articles/PMC3828570
Publikováno v:
2013 International Conference on Optical MEMS and Nanophotonics (OMN).
A novel process using self-aligned microbonding technique for Ge butt-coupled to silicon waveguides is presented. The photodetector features a low dark current of 0.29 μA and a high responsivity of 1.01 A/W at 1310 nm at -1 V bias.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da8271ae57409f2c9a8f3e6990050e1e
https://doi.org/10.1109/omn.2013.6659054
https://doi.org/10.1109/omn.2013.6659054
Autor:
Chih-Kuo Tseng, Wei-Ting Chen, Ku-Hung Chen, Han-Din Liu, Yimin Kang, Neil Na, Ming-Chang M. Lee
Publikováno v:
Scientific Reports; 11/15/2013, p1-6, 6p